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J Mater Sci Technol  1999, Vol. 15 Issue (06): 523-526    DOI:
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Indium Composition Dependence of the Size Uniformity of InGaAs Quantum Dots on (311)B GaAs Grown by Molecular Beam Epitaxy
Weihong JIANG, Huaizhe XU, Bo XU, Wei ZHOU, Qian GONG, Ding DING, Jiben LIANG, Zhanguo WANG
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Abstract  The deposition of InxGa1-xAs (0.2≤x≤0.5) on (311)B GaAs surfaces using solid source molecular beam epitaxy (MBE) has been studied. Both AFM and photoluminescence emission showed that homogeneous quantum dots could be formed on (311)B GaAs surface when indium composition was around 0.4. Indium composition had a strong influence on the size uniformity and the lateral alignment of quantum dots. Compared with other surface orientation, (100) and (n11)A/B (n=1,2,3), photoluminescence measurement confirmed that (311)B surface is the most advantageous in fabricating uniform and dense quantum dots.
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Received:  23 November 1998     
Corresponding Authors:  Weihong JIANG     E-mail:  whjiang@red.semi.ac.cn

Cite this article: 

Weihong JIANG, Huaizhe XU, Bo XU, Wei ZHOU, Qian GONG, Ding DING, Jiben LIANG, Zhanguo WANG. Indium Composition Dependence of the Size Uniformity of InGaAs Quantum Dots on (311)B GaAs Grown by Molecular Beam Epitaxy. J Mater Sci Technol, 1999, 15(06): 523-526.

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