J. Mater. Sci. Technol. ›› 2020, Vol. 48: 31-35.DOI: 10.1016/j.jmst.2019.12.023

• Research Article • Previous Articles     Next Articles

Two-stage Hall-Petch relationship in Cu with recrystallized structure

Y.Z. Tiana,*(), Y.P. Renb, S. Gaoc,d, R.X. Zhenge, J.H. Wangf, H.C. Pana, Z.F. Zhangg,h, N.T sujic,d, G.W. Qinb   

  1. a Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China
    b State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, China
    c Department of Materials Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
    d Elements Strategy Initiative for Structural Materials (ESISM), Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto, 606-8501, Japan
    e Key Laboratory of Aerospace Advanced Materials and Performance of Ministry of Education, School of Materials Science and Engineering, Beihang University, Beijing 100191, China
    f State Grid Urban and Rural Electric Power Design Research (Beijing) Co. Ltd, Beijing 100078, China
    g Laboratory of Fatigue and Fracture for Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
    h School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
  • Received:2019-10-16 Accepted:2019-12-09 Published:2020-07-01 Online:2020-07-13
  • Contact: Y.Z. Tian

Abstract:

Although Cu was studied extensively, the Hall-Petch relationship was mainly reported in the coarse-grained regime. In this work, fully recrystallized Cu specimens with a wide grain size regime of 0.51-14.93 μm manifest a two-stage Hall-Petch relationship. There is a critical grain size of 3 μm that divides stages I and II where the Hall-Petch slope k value are quite different. The stage II is supposed to be validified down to 100 nm at least by comparing with a Cu-Ag alloy. The critical grain size varies in different materials systems, and the underline mechanisms are discussed based on the dislocation glide modes.

Key words: Cu, Yield strength, Hall-Petch relationship, Ultrafine grain, Recrystallization