[1] G.S.Pomrenke, P.B.Klein and D.W.Langer: Mater.Res. Soc. Proc., Rare Earth Doped Semicondnctors,Pittsburgh, 1993, 301, 1. [2] S.Coffa, F.Priolo, G.Franzo, V.Bellani, A.Carnera andC.Spinelle: Phys. Rev., 1994, 48, 11782. [3] P.N.Favennec, H.L.Haridon, M.Salvi, D.Moutonnetand Y.Le Guill0u: Electron Lett., 1989, 25, 718. [4] L.T.Canham: Appl. Phys. Lett., 1990, 57, 1046. [5] T.Kimura, A.Yokoi, H.Horiguchi, R.Saito, T.Ikomaand A.Saito: Appl. Phys. Lett., 1994, 65, 983. [6] X.Zhao, S.Komuro, S.Maruyama, H.Isshiki, Y.Aoyagi and T.Sugano: Mater. Res. Soc. Symp. Proc., 1996,422, 143. [7] X.Zhao, S.Komuro, H.Isshiki, S.Maruyama, Y.Aoyagi and T.Sugano: Appl. Surf Sci., 1997, 113/114, 121. [8] Z.Feng and R.Tsu: Porous Silicon, World Scientific,1994, 1. [9] V.Petrova-Koch, T.Muschik, A.Kux, B.K.Meyer,F.Koch and V.Lehmann: Appl. Phys. Lett., 1992,61, 943. [10] Y.Kanemitsu, K.Suzuki, Y.Masumoto, T.Komatsu,K.Sato, S.Kyushin and H.Matsumoto: Solid StateCommun., 1993, 86, 545. [11] A.Taguchi, H.Nakagome and K.Takahei: J. Appl.Phys., 1991, 70, 5604. [12] X.Zhao, K.Hirakawa and T.Ikoma: Proc. of 2rd ICMPC for VLSI, Shanghai, 1991, 549. [13] F.Prioro, G.Franzo, S.Coffa and A.Carnera: Phys.Rev., 1998, B57, 4443 |