Abstract: Sliver is a common but easily neglected defect in single crystal Ni-based superalloy castings. To date, there is still no unified viewpoint on its formation mechanism and generation causes. In this work, the orientation discontinuity and motion behavior of sliver defects were studied through experiments and numerical simulations. The ultrathin wedge-shaped specimen containing the grain boundary of the sliver and the matrix was prepared at the initial position of the sliver defect for the observation of equal thickness fringes. The discontinuity of equal thickness fringes on both sides of the grain boundary was observed through a transmission electron microscope, which directly confirms the abrupt change in the orientation between the sliver and matrix from the nanoscale. The crystal lattices at the smooth area and the bulging area of the grain boundary were found to have unusually different arrangements. The irregular lattice arrangement at the bulging area shows that the grain boundary has experienced high-stress deformation. Statistical results of sliver orientation deviation with a further composition analysis show the micro protuberance of the mold shell has a noticeable inductive effect on the sliver generation. Furthermore, a self-developed three-dimensional phase-field simulation model coupled with the spatial topology algorithm is established to simulate the orientation deflection behavior and orientation deviation threshold of fractured dendrites. The simulation results indicated that there is an upper limit of the cross-section solid fraction at the fracture position for the motion of the fractured dendrites. When the cross-section solid fraction at the fracture position is higher than this upper limit, it will be difficult to produce large deviation slivers due to the structural limitation of surrounding dendrites. This upper limit does not change with the solidification temperature gradient.

Key words: Single crystal Ni-based superalloys, Directional solidification, Sliver defect, Phase-field simulation