Effect of Al Doping on Structural, Electrical, Optical and Photoluminescence Properties of Nano-Structural ZnO Thin Films

Abstract

Abstract: The nano-structural Al-doped ZnO thin films of different morphologies deposited on glass substrate were successfully fabricated at substrate temperature of 350 °C by an inexpensive spray pyrolysis method. The structural, electrical, optical and photoluminescence properties were investigated. X-ray diffraction study revealed the crystalline wurtzite (hexagonal) structure of the films with nano-grains. Scanning electron microscopy (SEM) micrographs indicated the formation of a large variety of nano-structures during film growth. The spectral absorption of the films occurred at the absorption edge of ˜410 nm. In the present study, the optical band gap energy 3.28 eV of ZnO decreased gradually to 3.05 eV for 4 mol% of Al doping. The deep level activation energy decreased and carrier concentrations increased substantially with increasing doping. Exciting with the energy 3.543 eV (λ=350 nm), a narrow and a broad characteristic photoluminescence peaks that correspond to the near band edge (NBE) and deep level emissions (DLE), respectively emerged.

Key words: Thin film, Nano-structure, ZnO, Surface morphology, Photoluminescence

M. Mozibur Rahman, M.K.R. Khan, M. Rafiqul Islam, M.A. Halim, M. Shahjahan, M.A. Hakim, Dilip Kumar Saha, Jasim Uddin Khan. Effect of Al Doping on Structural, Electrical, Optical and Photoluminescence Properties of Nano-Structural ZnO Thin Films[J]. J Mater Sci Technol, 2012, 28(4): 329-335.

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