J. Mater. Sci. Technol. ›› 2020, Vol. 54: 48-57.DOI: 10.1016/j.jmst.2020.03.040
• Research article • Previous Articles Next Articles
Changsong Chena,b,e, Jiang Chena,b, Zhen Wanga,b, Jian Zhangc, Haisheng Sana,b,*(), Shichao Liud, Chunyu Wud, Werner Hofmanna,e
Received:
2020-02-26
Revised:
2020-03-15
Accepted:
2020-03-15
Published:
2020-10-01
Online:
2020-10-21
Contact:
Haisheng San
Changsong Chen, Jiang Chen, Zhen Wang, Jian Zhang, Haisheng San, Shichao Liu, Chunyu Wu, Werner Hofmann. Free-standing ZnO nanorod arrays modified with single-walled carbon nanotubes for betavoltaics and photovoltaics[J]. J. Mater. Sci. Technol., 2020, 54: 48-57.
Fig. 1. Monte Carlo modeling and simulating of ZNRAs under beta irradiation. (a) 3-D model of ZNRAs and trajectories simulations of beta particles in ZNRAs; Energy deposition of beta particles in ZNRAs on (b) y-z plane and (c) x-y plane; (d) Schematic carrier excitation and transport processes in the energy band of m-SWCNT/ZnO structure; (e) Energy deposition distribution and deposition ratio of incident beta particles in 1-D ZnO nanorod along the length direction of ZnO nanorod.
Fig. 2. Schematic illustration of fabrication processes of the SWCNTs/ZNRAs-based beta/photovoltaic cell. (a) Fabrication processes of ZNRAs; (b) 3-D explosive and (c) 3-D assembled diagrams of beta/photovoltaic cell. The inset shows the photographs of (i) AZO/glass, (ii) ZNRAs/AZO/glass and (iii) SWCNTs/ZNRAs/AZO/glass samples.
Fig. 3. (a) Top-view SEM image of ZNRAs sample and (inset) its partial enlarged image; (b) Top-view SEM image of 3-CNT/ZNRAs sample. Partial enlarged (c) top-view and (d) cross-section-view SEM images of SWCNTs/ZNRAs sample; EDS mappings of (e) C, (f) O, and (g) Zn in 3-CNT/ZNRAs sample.
Fig. 5. (a) UV-vis absorption spectra of the ZNRAs sample and SWCNTs/ZNRAs samples with different amounts of SWCNTs loaded; (b) The bandgap values estimated from the main absorption edge of the profile.
Fig. 6. (a) I-V characteristics of ZNRAs-based and 3-CNT/ZNRAs-based devices with and without 63Ni source. Inset is the photograph of SWCNTs/ZNRAs-based device and the measurement system; (b) Dark characteristics in semi-log scale of ZNRAs-based and 3-CNT/ZNRAs-based devices; Series resistances of (c) ZRNAs-based and (d) 3-CNT/ZRNAs-based devices.
Fig. 7. (a) Betavoltaic characteristics of ZNRAs-based and 3-CNT/ZNRAs-based devices with and without 63Ni source; (b) Differential conductance characteristics, (c) I-V characteristics, and (d) P-V characteristics of ZNRAs-based devices and SWCNTs/ZNRAs-based devices with different SWCNT contents under beta irradiation.
Fig. 8. I-V characteristics of ZNRAs-based and SWCNTs/ZNRAs-based devices under (a) UV irradiation of 2.90 mW cm-2 and (b) visible light irradiation of 2.68 mW cm-2; Time-dependent pulse photoresponses of ZNRAs-based and SWCNTs/ZNRAs-based devices without external bias under (c) UV and (d) visible light irradiation.
Sample | SWCNT content (mg/mL) | Open-circuit voltage | Short-circuit current | Max power density | Filling factor | ECE |
---|---|---|---|---|---|---|
Voc (V) | Isc (nA) | Pmax(nW cm2) | FF | η (%) | ||
ZNRAs | - | 0.49 | 17.4 | 4.17 | 0.48 | 1.93 |
1-CNT/ZNRAs | 10% | 0.11 | 73.22 | 1.55 | 0.21 | 0.71 |
2-CNT/ZNRAs | 5.0% | 0.20 | 57.17 | 3.57 | 0.31 | 1.65 |
3-CNT/ZNRAs | 2.5% | 0.51 | 38.19 | 7.78 | 0.41 | 3.58 |
4-CNT/ZNRAs | 1.25% | 0.50 | 22.69 | 4.52 | 0.40 | 2.08 |
Table 1 Electrical parameters of the ZNRAs- and SWCNTs/ZNRAs-based betavoltaic devices.
Sample | SWCNT content (mg/mL) | Open-circuit voltage | Short-circuit current | Max power density | Filling factor | ECE |
---|---|---|---|---|---|---|
Voc (V) | Isc (nA) | Pmax(nW cm2) | FF | η (%) | ||
ZNRAs | - | 0.49 | 17.4 | 4.17 | 0.48 | 1.93 |
1-CNT/ZNRAs | 10% | 0.11 | 73.22 | 1.55 | 0.21 | 0.71 |
2-CNT/ZNRAs | 5.0% | 0.20 | 57.17 | 3.57 | 0.31 | 1.65 |
3-CNT/ZNRAs | 2.5% | 0.51 | 38.19 | 7.78 | 0.41 | 3.58 |
4-CNT/ZNRAs | 1.25% | 0.50 | 22.69 | 4.52 | 0.40 | 2.08 |
Fig. 9. Schematic illustrations of working mechanisms of beta/photovoltaic cell based on Ni/63Ni/SWCNTs/ZNRAs/AZO/glass structure. (a) Schematic 3-D device structure with the excitation and transport processes of carriers; (b) Schematic comparison of carrier transport in the ZRNAs and the SWCNTs/ZNRAs nanostructure; (c) Schematic energy band diagram with excitation and transport processes of carriers.
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