The accelerating nanoscale Kirkendall effect in Co films-native oxide Si (100) system induced by high magnetic fields

doi:10.1016/j.jmst.2019.11.038

Abstract

Abstract:

The morphology evolution and magnetic properties of Co films-native oxide Si (100) were investigated at 873, 973, and 1073 K in a high magnetic field of 11.5 T. Formation of Kirkendall voids in the Co films was found to cause morphology evolution due to the difference in diffusion flux of Co and Si atoms through the native oxide layer. The high magnetic fields had considerable effect on the morphology evolution by accelerating nanoscale Kirkendall effect. The diffusion mechanism in the presence of high magnetic fields was given to explain the increase of diffusion coefficient. The morphology evolution of Co films on native oxide Si (100) under high magnetic fields during annealing resulted in the magnetic properties variation.

Key words: Thin films, Annealing, Diffusion, Kirkendall effect, High magnetic field

Yue Zhao, Kai Wang, Shuang Yuan, Yonghui Ma, Guojian Li, Qiang Wang. The accelerating nanoscale Kirkendall effect in Co films-native oxide Si (100) system induced by high magnetic fields[J]. J. Mater. Sci. Technol., 2020, 46: 127-135.

Figures/Tables 8

Fig. 1. Schematic diagrams of (a) superconducting magnetic field annealing system, (b) diffusion couple.

Fig. 2. SEM images of Co films-native oxide Si (100) samples annealed at various conditions: (a) 873 K, 0 T; (b) 873 K, 11.5 T; (c) 973 K, 0 T; (d) 973 K, 11.5 T; (e) 1073 K, 0 T; (f) 1073 K, 11.5 T.

Fig. 3. EDS mappings of Co and Si elements of Co films-native oxide Si (100) samples annealed with an 11.5 T magnetic field at 873 K: (a) SEM, (b) Co Kα1, (c) Si Kα1 and 1073 K: (d) SEM, (e) Co Kα1, (f) Si Kα1.

Fig. 4. TEM images of Co films-native oxide Si (100) samples annealed at various conditions: (a) 873 K, 0 T; (b) 873 K, 11.5 T; (c) 973 K, 0 T; (d) 973 K, 11.5 T; (e) 1073 K, 0 T; (f) 1073 K, 11.5 T.

Fig. 5. M-H curves of Co-native oxide Si (100) samples after different annealing temperatures: (a) in-plane, (b) out-of-plane.

Fig. 6. In-plane magnetic hysteresis loops of Co-native oxide Si (100) samples annealed with and without an 11.5 T magnetic field at different temperatures: (a) 873 K, (b) 973 K, (c) 1073 K.

Fig. 7. XPS depth profiles of Co-native oxide Si (100) samples annealed with and without an 11.5 T magnetic field at different temperatures: (a) 873 K, (b) 973 K, (c) 1073 K.

Fig. 8. Schematics of the morphology evolution caused by nanoscale Kirkendall effect with and without an 11.5 T magnetic field.

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