Attaining enhanced thermoelectric performance in p-type (SnSe)1-x(SnS2)x produced via sintering their solution-synthesized micro/nanostructures

doi:10.1016/j.jmst.2021.11.072

Abstract

Abstract:

SnSe, possessing strong lattice anharmonicity and structural anisotropy, has attracted massive attention in thermoelectric conversion. Herein, we demonstrate that simultaneously optimized electrical and thermal transport properties are achieved in SnS₂-alloyed SnSe polycrystalline materials, which were fabricated via sintering the mixture of solution-synthesized SnSe microplates and SnS₂ nanoplates. Resulting from the increased carrier concentration, p-type (SnSe)_1-_x(SnS₂)_x (x = 0.5%, 1%) samples obtain much-improved power factor between 300 K and 373 K, e.g. 0.72 mW m^-1 K^-2 at 300 K for (SnSe)_0.99(SnS₂)_0.01, which is enhanced by 53% compared to that of SnSe. Additionally, the existing point defects and planar defects effectively strengthen phonon scattering, thus reducing the lattice thermal conductivity, for example, 0.47 W m^-1 K^-1 at 773 K for the x = 0.02 sample. Eventually, a maximum zT of 0.80 at 823 K and an average zT of 0.52 over 300 - 823 K are obtained in the (SnSe)_0.99(SnS₂)_0.01 sample, which are increased by 33% and 45% compared to those of SnSe, respectively. This study demonstrates a secondary phase alloying strategy to synergistically optimize the electrical and thermal properties of polycrystalline SnSe.

Key words: Thermoelectric, SnSe, SnS₂, Solvothermal synthesis, Lattice thermal conductivity

Xiaofang Liu, Hengyang Wang, Bin Zhang, Sikang Zheng, Yao Chen, Hong Zhang, Xianhua Chen, Guoyu Wang, Xiaoyuan Zhou, Guang Han. Attaining enhanced thermoelectric performance in p-type (SnSe)_1-_x(SnS₂)_x produced via sintering their solution-synthesized micro/nanostructures[J]. J. Mater. Sci. Technol., 2022, 120: 205-213.

Figures/Tables 9

Fig. 1. Schematic illustration on the fabrication processes of the (SnSe)1-x(SnS2)x samples.

Fig. 2. (a) XRD patterns of the (SnSe)1-x(SnS2)x (x = 0, 0.25%, 0.5%, 1%, 2%) powders, (b) the corresponding magnified regions in 2θ range from 31° to 34°.

Fig. 3. SEM images of the tin chalcogenide powder samples: (a) SnSe, (b) SnS2, (c, e) (SnSe)0.99(SnS2)0.01, (d, f) (SnSe)0.98(SnS2)0.02.

Fig. 4. (a) XRD patterns and the enlarged (400) diffraction peak for the (SnSe)1-x(SnS2)x (x = 0, 0.25%, 0.5%, 1%, 2%) pellets, (b-f) SEM images collected from the fractured surfaces of (SnSe)1-x(SnS2)x pellets with x of 0, 0.25%, 0.5%, 1%, and 2%, respectively. All characterization was performed on the pellets parallel to the pressing direction.

Fig. 5. TEM and EDS characterization of the (SnSe)0.99(SnS2)0.01 sample: (a) TEM image, (b) HAADF image and EDS elemental mapping, (c) EDS spectrum.

Fig. 6. Electrical properties of the (SnSe)1-x(SnS2)x (x = 0, 0.25%, 0.5%, 1%, 2%) pellets: (a) electrical conductivity, (b) Seebeck coefficient, (c) power factor.

Table 1. Electrical conductivity, Hall carrier concentration, and carrier mobility at room temperature of the (SnSe)1-x(SnS2)x (x = 0, 0.25%, 0.5%, 1%, 2%) pellets.

Samples	σ (10³ S m^-1)	p_H (10¹⁹ cm^-3)	μ_H (cm² V^-1 s^-1)
x = 0	8.87	1.21	45.8
x = 0.25%	10.5	1.56	42.0
x = 0.5%	13.0	1.64	49.4
x = 1%	13.1	1.72	47.5
x = 2%	5.96	1.08	34.5

Fig. 7. Thermal conductivity and zT values for the (SnSe)1-x(SnS2)x (x = 0, 0.25%, 0.5%, 1%, 2%) pellets: (a) κtot, (b) κlat, (c) zT, (d) zTavg over 300 - 823 K.

Fig. 8. TEM characterization of the (SnSe)0.99(SnS2)0.01 sample: (a, b) HRTEM images collected along the [001] zone axis, (c) FFT pattern corresponding to (b). (d) illustration of the phonon scattering processes induced by various crystal defects.

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Attaining enhanced thermoelectric performance in p-type (SnSe)_1-_x(SnS₂)_x produced via sintering their solution-synthesized micro/nanostructures

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