J. Mater. Sci. Technol. ›› 2021, Vol. 85: 76-86.DOI: 10.1016/j.jmst.2020.12.063
• Research Article • Previous Articles Next Articles
Samuel Kimani Kihoia, Joseph Ngugi Kahiub, Hyunji Kima, U. Sandhya Shenoyc, D. Krishna Bhatd, Seonghoon Yia, Ho Seong Leea,*()
Received:
2020-09-03
Revised:
2020-12-15
Accepted:
2020-12-29
Published:
2021-09-20
Online:
2021-02-06
Contact:
Ho Seong Lee
About author:
*E-mail address: hs.lee@knu.ac.kr (H.S. Lee).Samuel Kimani Kihoi, Joseph Ngugi Kahiu, Hyunji Kim, U. Sandhya Shenoy, D. Krishna Bhat, Seonghoon Yi, Ho Seong Lee. Optimized Mn and Bi co-doping in SnTe based thermoelectric material: A case of band engineering and density of states tuning[J]. J. Mater. Sci. Technol., 2021, 85: 76-86.
Fig. 3. Temperature dependent (a) total thermal conductivity, (b) electronic thermal conductivity, (c) lattice thermal conductivity and (d) figure of merit for the Sn1-x-yMnxBiyTe samples.
Fig. 5. Temperature dependent (a) electrical conductivity and (b) Seebeck coefficient for the Sn0.92-yMn0.08BiyTe samples. (c) Pisarenko plot showing comparison of our experimental results with other high performance SnTe-based thermoelectric materials.
Sample | np × 1020 (cm-3) | μ (cm2/Vs) | Eg (eV) |
---|---|---|---|
SnTe | 4.5 | 87.3 | 0.15 |
Sn0.91Mn0.08Bi0.01Te | 2.8 | 74.2 | 0.22 |
Sn0.89Mn0.08Bi0.03Te | 2.1 | 65.9 | 0.23 |
Sn0.88Mn0.08Bi0.04Te | 1.3 | 69.3 | 0.27 |
Sn0.87Mn0.08Bi0.05Te | 0.7 | 64.1 | 0.28 |
Table 1 Carrier concentration, mobility, and calculated band gap for the Sn0.92-yMn0.08BiyTe samples.
Sample | np × 1020 (cm-3) | μ (cm2/Vs) | Eg (eV) |
---|---|---|---|
SnTe | 4.5 | 87.3 | 0.15 |
Sn0.91Mn0.08Bi0.01Te | 2.8 | 74.2 | 0.22 |
Sn0.89Mn0.08Bi0.03Te | 2.1 | 65.9 | 0.23 |
Sn0.88Mn0.08Bi0.04Te | 1.3 | 69.3 | 0.27 |
Sn0.87Mn0.08Bi0.05Te | 0.7 | 64.1 | 0.28 |
Fig. 6. Electronic structures of (a) Sn16Te16, (b) Sn15BiTe16, (c) Sn15MnTe16 and (d) Sn14BiMnTe16. Energies are shifted with respect to Fermi level which is set to zero. R.S. denotes resonance states.
Fig. 8. (a) Temperature dependent power factor the Sn0.92-yMn0.08BiyTe samples and (b) comparison of the maximum power factor obtained in this work with other high performance SnTe-based materials.
Fig. 9. Temperature dependent (a) total thermal conductivity, (b) electronic thermal conductivity and (c) lattice thermal conductivity for the Sn0.92-yMn0.08BiyTe samples.
Fig. 11. (a) High-Angle Annular Dark Field (HAADF) image, (b-e) corresponding EDS elemental mapping and (f) EDS line scanning along the yellow arrow showing mass fraction of the elements for the Sn0.89Mn0.08Bi0.03Te sample.
Fig. 12. (a) BF image, (b) SAED pattern, (c) HRTEM image and (d) corresponding fast Fourier transform (FFT) image for the Sn0.89Mn0.08Bi0.03Te sample.
Fig. 14. Vickers hardness values for all the samples in this work. Part 1 is for Mn-Bi varying composition and Part 2 for Mn constant composition, with the arrows showing the transition.
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