J. Mater. Sci. Technol. ›› 2021, Vol. 87: 39-45.DOI: 10.1016/j.jmst.2021.01.052

• Research Article • Previous Articles     Next Articles

Top-down method to fabricate TiNi1+xSn half-Heusler alloy with high thermoelectric performance

Xiong Yanga, Daquan Liub, Jianbo Lia, Ruonan Mina, Huijun Kanga,c,*(), Linwei Lia, Zongning Chena,c, Enyu Guoa,c, Tongmin Wanga,c,*()   

  1. aKey Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
    bSchool of Physics and Electronic Information, Hulunbeier University, Inner Mongolia 021008, China
    cNingbo Institute of Dalian University of Technology, Ningbo 315000, China
  • Received:2020-12-17 Revised:2021-01-23 Accepted:2021-01-28 Published:2021-10-10 Online:2021-03-17
  • Contact: Huijun Kang,Tongmin Wang
  • About author:tmwang@dlut.edu.cn (T. Wang).
    * Key Laboratory of Solidification Control and Dig-ital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China. E-mail addresses: kanghuijun@dlut.edu.cn (H. Kang),

Abstract:

The top-down method was used to fabricate the TiNi1+xSn half-Heusler alloy. Several knotty problems have been solved using the top-down method, including the generation of impurity phases, the visible discrepancy in the grain size of the TiNi2Sn second phase, and irregular variations in the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ) with increasing Ni content. The generation of a large number of incoherent interfaces between the half-Heusler (HH) and full-Heusler (FH) phases fabricated by the top-down method drastically improved σ and retained κ and S, thereby leading to an enhancement in the dimensionless figure of merit (ZT) by ∼19 % for the TiNi1.05Sn sample as compared to the ZT of the samples prepared by the conventional method.

Key words: n-type, TiNi1+xSn, Thermoelectric, Thermal conductivity, Incoherent interfaces, Electrical conductivity