Doping Silicon Wafers with Boron by Use of Silicon Paste

J. Mater. Sci. Technol. ›› 2013, Vol. 29 ›› Issue (7): 652-654.

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Doping Silicon Wafers with Boron by Use of Silicon Paste

Yu Gao, Shu Zhou, Yunfan Zhang, Chen Dong, Xiaodong Pi, Deren Yang

State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Received:2013-01-31 Revised:2013-02-28 Online:2013-07-30 Published:2013-06-08
Contact: Xiaodong Pi
Supported by:
National Basic Research Program of China (“973 Program”, Grant No. 2013CB632101), the National Natural Science Foundation of China (Grant No. 50902122), the R&D Program of Ministry of Education of China (Grant No. 62501040202), the Innovation Team Project of Zhejiang Province (Grant No. 2009R50005)

Abstract

Abstract:

In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon. Boron-doped silicon nanoparticles are synthesized by a plasma approach. They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers. By annealing, boron atoms in silicon paste diffuse into silicon wafers. Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles. The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

Key words: Silicon nanoparticles, Silicon paste, Doping, Boron

Yu Gao, Shu Zhou, Yunfan Zhang, Chen Dong, Xiaodong Pi, Deren Yang. Doping Silicon Wafers with Boron by Use of Silicon Paste[J]. J. Mater. Sci. Technol., 2013, 29(7): 652-654.

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Doping Silicon Wafers with Boron by Use of Silicon Paste

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