J. Mater. Sci. Technol. ›› 2020, Vol. 58: 86-94.DOI: 10.1016/j.jmst.2020.01.074
• Research Article • Previous Articles Next Articles
Lei Liu*(), Feifei Lu, Jian Tian, Xingyue Zhangyang, Zhisheng Lv
Received:
2019-12-06
Accepted:
2020-01-23
Published:
2020-12-01
Online:
2020-12-17
Contact:
Lei Liu
Lei Liu, Feifei Lu, Jian Tian, Xingyue Zhangyang, Zhisheng Lv. High-efficient electron collection capability of graded Al compositional GaN nanowire arrays cathode[J]. J. Mater. Sci. Technol., 2020, 58: 86-94.
Fig. 1. (a) Schematic diagram of GaN nanowire array photocathode with a built-in electric field. Schematic diagram of (b) incident illumination and (c) emitted electrons.
Fig. 2. (a) Schematic diagram of a single exponential-doping GaN nanowire array cathode. The band structure of exponential-doping GaN nanowire array photocathode in the (b) x-z plane and (c) x-y plane. EF represents Fermi level, Eg (z) represents bandgap, BBR represents band bending region, and I and II represent triangular barriers.
Fig. 3. (a) Schematic diagram of a single graded Al-compositional GaN nanowire array cathode. (b) A simplified band structure of the graded Al-compositional GaN nanowire array photocathode in the x-z plane.
Fig. 4. The quantum efficiency of uniform-doping, exponential-doping and graded compositional GaN nanowires arrays in all surface and top surface. H = 400 nm, d = 150 nm, L = 400 nm and θ = 30°.
Fig. 5. The total quantum efficiency and top surface quantum efficiency of the uniform-doping, exponential-doping, and graded compositional GaN nanowire array photocathode as a function of nanowire height (a) and width (b). (a) Conditions: λ = 265 nm, d = 150 nm, L = 400 nm, θ = 30°. (b) Conditions: λ = 265 nm, H = 500 nm, L = 400 nm, θ = 30°.
Fig. 6. The quantum efficiency of the (a) uniform-doping, (b) exponential-doping, and (c) graded compositional GaN nanowire array photocathode as a function of nanowire height and width. λ = 265 nm, L = 400 nm, θ = 30°.
Fig. 7. The quantum efficiency of (a) the exponential-doping and (b) graded compositional GaN nanowire arrays photocathode as a function of the angle of incidence at different array spacings. λ = 265 nm, H = 500 nm, d = 100 nm.
Fig. 8. The collection efficiency of (a) the exponential-doping and (b) graded compositional GaN nanowire arrays photocathode as a function of the angle of incidence at different array spacings. (c) The total electron collection ratio of uniform-doping, exponential-doping and graded compositional GaN nanowire arrays photocathode as a function of nanowire spacing. λ = 265 nm, H = 500 nm, d = 100 nm.
Fig. 10. (a) The effective collection probability of electrons emitted from the sides of GaN nanowire arrays with different spacings in no external electric field. (b) The effective collection probability of electrons emitted from the sides of GaN nanowire arrays with different field intensities under a spacing L = 400 nm.
Fig. 11. The collection efficiency of (a) the exponential-doping and (b) graded compositional GaN nanowire arrays photocathode as a function of the external electric field at different array spacings. (c) The total electron collection ratio of uniform-doping, exponential-doping and graded compositional GaN nanowire arrays photocathode as a function of nanowire spacing under Eout=1V/μm and Eout=2V/μm. λ = 265 nm, H = 500 nm, d = 100 nm.
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