Significant control of metal-insulator transition temperature through catalytic excessive oxygen doping in high-performance vanadium dioxide nanobeam channel

doi:10.1016/j.jmst.2019.10.022

Abstract

Abstract:

The strategy of a reliable transition temperature control of vanadium dioxide (VO₂) is reported. Rectangular VO₂ nanobeams were synthesized by a thermal chemical vapor deposition (TCVD) system. The metal-insulator transition (MIT) temperature increases to above 380 K when the TiO₂ ratio of the source is 5 at.%, although the Ti source is not physically doped into VO₂ nanobeams. The XPS spectra of the V 2p orbital reveal the excessive oxidation of V after the TCVD processes with a higher TiO₂ ratio, indicating that the TiO₂ precursor is important in the O-doping of the surface V—O bonds when forming volatile Ti-O gas species. Thus, TiO₂ reactants can be used as a VO₂ surface chemical modifier to manipulate the MIT transition temperature and maintain a homogenous VO₂ phase, which is useful for a Mott device application with a record on/off switching ratio > 10⁴ and Mott transition temperature > 380 K.

Key words: VO₂, Mott transition, Metal-insulator transition temperature, Oxygen doping, Titanium catalyst

Minhwan Ko, Sang Yeon Lee, Jucheol Park, Hyungtak Seo. Significant control of metal-insulator transition temperature through catalytic excessive oxygen doping in high-performance vanadium dioxide nanobeam channel[J]. J. Mater. Sci. Technol., 2020, 44: 96-101.

Figures/Tables 5

Fig. 1. (a) Schematic illustration of VO2 nanobeam growth system. (b) X-ray diffraction patterns for a VO2 nanobeam on a quartz substrate. (c) Raman spectra of VO2 nanobeam for different Ti ratios of precursor. (d) SEM image of two-terminal VO2 nanobeam device and inset showing magnified image of nanobeam edge.

Fig. 2. (a) Temperature-dependent current change and hysteresis between heating and cooling of VO2 nanobeam at 1 V. (b) Transition temperature and resistivity change (RInsulator/Metal) ratio with Ti ratio of source. The average values marked with error-bar are from multiple sample measurements. Endurance examination results measured with repetitive switching owing to the electric field near the transition temperature of the (c) VT0 and (d) VT5 samples (note that voltage and temperature are different for two samples).

Fig. 3. (a) Narrow XPS scan of V 2p and O 1s; (b) Area ratio of V 2p with Ti ratio (at.%) in source; (c) Valence band XPS spectra of VO2 nanobeam.

Fig. 4. HR-TEM images and SEAD patterns of VT0, VT2, VT5, and VT10.

Fig. 5. MIT temperature and on/off current ratio in this work as compared to those in other reports.

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