J. Mater. Sci. Technol. ›› 2020, Vol. 40: 72-80.DOI: 10.1016/j.jmst.2019.09.014
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Myung-Sic Chaea, Tae Ho Leea, Kyung Rock Sona, Tae Hoon Parka, Kyo Seon Hwangb, Tae Geun Kima*()
Received:
2018-12-03
Revised:
2019-08-20
Accepted:
2019-09-03
Published:
2020-03-01
Online:
2020-04-01
Contact:
Kim Tae Geun
Myung-Sic Chae, Tae Ho Lee, Kyung Rock Son, Tae Hoon Park, Kyo Seon Hwang, Tae Geun Kim. Electrochemically metal-doped reduced graphene oxide films: Properties and applications[J]. J. Mater. Sci. Technol., 2020, 40: 72-80.
Fig. 1. Optical image of EDT configuration and schematic diagrams of the EDT process on RGO films: (1) basic configuration of EDT with a Ni dopant and AlN buffer layers on the RGO film, (2) EDT of RGO films through conductive bridges formed during the EBD process under electric fields, and (3) hypothetical diagram showing Ni-doped areas on RGO films.
Sample label | Initial concentration of GO solution (mg mL-1) | Thickness (nm) | Surface roughness (nm) | Sheet resistance (kΩ sq-1) |
---|---|---|---|---|
RGO1 | 1.0 | 7.17 (± 0.43) | 1.05 (± 0.64) | 144.65 (± 5.29) |
RGO2 | 2.0 | 9.22 (± 0.67) | 1.16 (± 0.78) | 87.50 (± 6.81) |
RGO3 | 3.0 | 11.63 (± 1.13) | 1.37 (± 0.85) | 28.94 (± 3.98) |
RGO4 | 4.0 | 21.58 (± 1.46) | 1.43 (± 1.13) | 16.82 (± 3.75) |
RGO5 | 5.0 | 29.93 (± 2.12) | 1.82 (± 1.06) | 8.55 (± 2.44) |
Table 1 Fundamental characteristics of prepared RGO films.
Sample label | Initial concentration of GO solution (mg mL-1) | Thickness (nm) | Surface roughness (nm) | Sheet resistance (kΩ sq-1) |
---|---|---|---|---|
RGO1 | 1.0 | 7.17 (± 0.43) | 1.05 (± 0.64) | 144.65 (± 5.29) |
RGO2 | 2.0 | 9.22 (± 0.67) | 1.16 (± 0.78) | 87.50 (± 6.81) |
RGO3 | 3.0 | 11.63 (± 1.13) | 1.37 (± 0.85) | 28.94 (± 3.98) |
RGO4 | 4.0 | 21.58 (± 1.46) | 1.43 (± 1.13) | 16.82 (± 3.75) |
RGO5 | 5.0 | 29.93 (± 2.12) | 1.82 (± 1.06) | 8.55 (± 2.44) |
Fig. 3. Optimization of critical parameters for EDT on RGO films: (a) I-V characteristics of EDT depending on RGO conditions; (b) statistical distribution of the forming voltage depending on RGO conditions; (c) I-V characteristics of the EDT depending on the thickness of the AlN buffer layer (10, 30, 50, 80, and 100 nm); (d) statistical distribution of the forming voltage depending on AlN thickness; (e) I-V characteristics of the EDT depending on the gap spacing between Ni electrodes (5, 10, 15, and 20 μm); (f) statistical distribution of the forming voltages relying on the gap spacing between Ni electrodes.
Fig. 4. (a) Elemental analysis from XPS spectra across a wide range of binding energies; (b) C 1s XPS spectra of EDT-RGO and bare RGO. Grey lines represent the functional groups of each RGO film, and the red and black lines correspond to the sum of all individual components; (c) Ni 2p XPS spectra of EDT-RGO (red line) and bare RGO (black line); (d) Raman spectra of EDT-RGO (red line) and bare RGO (black line).
Fig. 5. Conductive atomic force microscopy (C-AFM) images for RGO films before and after EDT process. Topographic images of the RGO film for (a) bare RGO and (b) EDT-RGO (the scale bar is 1 μm); surface current mappings of (c) bare RGO and (d) EDT-RGO; (e) comparison of results from C-AFM measurement between bare RGO (circle) and EDT-RGO (square).
Fig. 6. Controlling the doping level on RGO surface: (a) optical image of device configuration for monitoring sheet resistance changes due to doping; (b) changes in the sheet resistance of the RGO film dependent on different doping levels.
Fig. 7. Conversion of electrical transfer characteristics of the RGO-FETs relying on doping levels: (a) Photograph of the RGO-FET device with EDT configurations; (b) transfer characteristics (VDS = -5 V) of RGO-FETs with different doping levels on the active layer. The schematic diagrams above each graph are conceptual illustrations of as-doped RGO-FETs with different doping areas. The insets show schematic band diagrams of the EDT-RGO active layer; (c) changes in field-effect mobilities in an electron region (μe) and hole region (μh) of RGO active channels according to the doping level.
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