[1 ] T.M. Tritt: Science, 1999, 283, 804.[2 ] Y.D. Xu, G.Y. Xu, Y.H. Liu and C.C. Ge: Chin. Phys. Lett., 2008, 7, 2664.[3 ] P.W. Zhu, Y. Imai, Y. Isoda, Y. Shinohara, X.P. Jia and G.T. Zou: Chin. Phys. Lett., 2005, 8, 2103.[4 ] Q. Shen, L.M. Zhang and J.G. Li: J. Mater. Sci. Technol., 1999, 15, 5.[5 ] I. Terasaki, Y. Sasago and K. Uchinokura: Phys. Rev. B, 1997, 56, R12685.[6 ] T. Okuda, K. Nakanishi, S. Miyasaka and Y. Tokura: Phys. Rev. B, 2001, 63, 113104.[7 ] H. Ohta, S.W. Kim and Y. Mune, T. Mizoguchi, K. Nomura, S. Ohta, T. Nomura, Y. Nakanishi, Y. Ikuhara, M. Hirano, H. Hosono and K. Koumoto: Nat. Mater., 2007, 6, 129.[8 ] J.L. Lan, Y.H. Lin, A. Mei, C.W. Nan, Y. Liu, B.P. Zhang and J.F. Li: J. Mater. Sci. Technol., 2009, 25, 535.[9 ] J. Androulakis, P. Migiakis and J. Giapintzakis: Appl. Phys. Lett., 2004, 84, 1099.[10] R. Robert, L. Bocher, M. Trottmann, A. Reller and A. Weidenka®: J. Solid State Chem., 2006, 179, 3893.[11] J. Androulakis, P. Migiakis and J. Giapintzakis: Appl. Phys. Lett., 2004, 84, 1099.[12] K. Iwasaki, T. Ito, M.T. Yoshino, T. Matsui, T. Nagasaki and Y.J. Arita: J. Alloy. Compd., 2006, 430, 297.[13] K. Kobayashi, S. Yamaguchi, T. Tsunoda and Y. Imai: Solid State Ion., 2001, 144, 123.[14] S.I. Vecherski·i, N.N. Batalov, N.O. Esina and G.Sh. Shekhtman: Phys. Solid State, 2003, 45, 1648.[15] X.D. Zhou, J.B. Wang, E.C. Thomsen, Q. Cai, B.J. Scarfino, Z. Nie, G.W. Co®ey, W.J. James, W.B. Yelon, H.U. Anderson and L.R. Pederson: J. Electrochem. Soc., 2006, 153, J133.[16] J.L. Cui, L.D. Mao, W. Yang, X.B. Xu, D.Y. Chen and W.J. Xiu: J. Solid State Chem., 2007, 180, 3583.[17] N.F. Mott and E.A. Davis: Electrical Process in NonCrystal-Line Materials, Oxford Univ. Press, Oxford, 1971.[18] W.J. Weber, C.W. Gri±n and J.L. Bates: J. Am. Ceram. Soc., 1987, 70, 265.[19] W.H. Jung and E. Iguchi: J. Phys. D: Appl. Phys., 1998, 31, 794. |