Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates

Abstract

Abstract: Surface passivation performances of Al₂O₃ layers deposited on p-type Czochralski Si wafers by atomic layer deposition (ALD) were investigated as a function of post-deposition annealing conditions. The maximal minority carrier lifetime of ~4.7 ms was obtained for Al₂O₃ passivated p-type Si. Surface passivation mechanisms of Al₂O₃ layers were investigated in terms of interfacial state density (D_it) and negative fixed charge densities (Q_fix) through capacitance-voltage (C-V) characterization. High density of Q_fix and low density of D_it were needed for high passivation performances, while high density of D_it and low density of Q_fix degraded the passivation performances. A low D_it was a prerequisite to benefit from the strong field effect passivation induced by high density of negative fixed charges in the Al₂O₃ layer.

Key words: Atomic layer deposition, Al2O3, Passivation, Films

Yanghui Liu, Liqiang Zhu, Liqiang Guo, Hongliang Zhang, Hui Xiao. Surface Passivation Performance of Atomic-Layer-Deposited Al₂O₃ on p-type Silicon Substrates[J]. J. Mater. Sci. Technol., 2014, 30(8): 835-838.

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Surface Passivation Performance of Atomic-Layer-Deposited Al₂O₃ on p-type Silicon Substrates

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