[1 ] J.F. Scott: Integr. Ferroelectr., 1998, 20, 15.[2 ] S.J. Fiedziuszko, I.C. Hunter, T. Itoh, Y. Kobayashi, T. Nishikawa, S.N. Stitzer and K. Wakino: Microw. Theory Tech. IEEE Trans., 2002, 50, 706.[3 ] J.H. Jeon, Y.D. Hahn and H.D. Kim: J. Eur. Ceram. Soc., 2001. 21, 1653.[4 ] T. Hu, H. Jantunen, A. Uusimaki and S. Leppavuori; Mater. Sci. Semicon. Proc., 2002, 5, 215.[5 ] T. Hu T, T.J. Price, D.M. Iddles, A. Uusimaki and H. Jantunen: J. Eur. Ceram. Soc., 2005, 25, 2531.[6 ] M. Valant and D. Suvorov: J. Am. Ceram. Soc., 2004, 87, 1222.[7 ] S.M. Rhim, S. Hong, H. Bak and O.K. Kim: J. Am. Ceram. Soc., 2000, 83, 1145.[8 ] Y. Chen, X.L. Dong, R.H. Liang, J.T. Li and Y.L. Wang: J. Appl. Phys., 2005, 98, 064107.[9 ] K.M. Johnson: J. Appl. Phys., 1962, 33, 2826.[10] R. Waser: Ferroelectrics, 1992, 133(1), 109.[11] A. Feteira, D.C. Sinclair, I.M. Reaney, Y. Somiya and M.T. Lanagan: J. Am. Ceram. Soc., 2004, 87, 1082.[12] W.L. Zhong: Physics of Ferroelectrics, Science Press, Beijing, 2000, 234{237. (in Chinese)[13] C.L. Huang, M.H. Weng and H.L. Chen: Mater. Chem. Phys., 2001, 71, 17. |