Resistive Switching Properties and Failure Behaviors of (Pt, Cu)/Amorphous ZrO2/Pt Sandwich Structures

doi:10.1016/j.jmst.2016.03.011

Abstract

Abstract: The effect of Pt and Cu electrodes on the resistive switching properties and failure behaviors of amorphous ZrO₂ films were investigated. Compared with Cu/ZrO₂/Pt structures, the Pt/ZrO₂/Pt structures exhibit better resistive switching properties such as the higher resistance ratio of OFF/ON states, the longer switching cycles and narrow distribution of OFF state resistance (R_off). The switching mechanism in the Pt/ZrO₂/Pt structure can be attributed to the formation and rupture of oxygen vacancy filaments; while in the Cu/ZrO₂/Pt structure, there exist both oxygen vacancy filaments and Cu filaments. The formation of Cu filaments is related to the redox reaction of Cu electrode under the applied voltage. The inhomogeneous dispersive injection of Cu ions results in the dispersive R_offand significant decrease of operate voltage. Schematic diagrams of the formation of conductive filaments and the failure mechanism in the Cu/ZrO₂/Pt structures are also proposed.

Key words: ZrO2, Thin films, Sol-gel method, Failure

Haifa Zhai, Jizhou Kong, Jien Yang, Jing Xu, Qingran Xu, Hongchen Sun, Aidong Li, Di Wu. Resistive Switching Properties and Failure Behaviors of (Pt, Cu)/Amorphous ZrO₂/Pt Sandwich Structures[J]. J. Mater. Sci. Technol., 2016, 32(7): 676-680.

Figures/Tables 7

(a) XRD patterns of ZrO2 thin films annealed at 300-700?°C under N2 atmosphere; (b) and (c) XPS spectra of Zr 3d and O 1s in the ZrO2 thin films annealed at 300?°C, respectively.

Typical unipolar I-V characteristics of Pt/ZrO2/Pt (a) and Cu/ZrO2/Pt (b) structures, respectively. During the set process, the current is limited to a compliance of 0.5?mA to prevent the permanent breakdown of the structures.

Resistive switching characteristics of Pt/ZrO2/Pt (a) and Cu/ZrO2/Pt (b) structures for a “write-read-erase-read” consequence at a reading voltage of 0.1?V, respectively.

Retention properties of Pt/ZrO2/Pt (a) and Cu/ZrO2/Pt (b) structures in the LRS and HRS at room temperature, respectively.

Plots of I-V characteristics of the Pt/ZrO2/Pt structure in ON state, double-logarithmic scale (a); OFF state, lnI versus sqrtV (b); and the Cu/ZrO2/Pt device in ON state, double-logarithmic scale (c), OFF state (d).

Schematic diagrams of the Pt/ZrO2/Pt structure under initial state (a), +V (<Vreset) (b), +V (>Vreset) (c), +V (>Vset) (d).

Schematic diagrams of the Cu/ZrO2/Pt structure under initial state (a), +V (<Vreset) (b), +V (>Vreset) (c), +V (>Vset) (d) and eventual failure (e).

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Resistive Switching Properties and Failure Behaviors of (Pt, Cu)/Amorphous ZrO₂/Pt Sandwich Structures

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