CsPbI3 nanorods as the interfacial layer for high-performance, all-solution-processed self-powered photodetectors

doi:10.1016/j.jmst.2020.07.049

Abstract

Abstract:

Heterojunction is regarded as a crucial step toward realizing high-performance devices, particularly, forming gradient energy band between heterojunctions benefits self-powered photodetectors. Therefore, in this paper, the synthesis of CsPbI₃ nanorods (NRs) and its application as the interfacial layer in high-performance, all-solution-processed self-powered photodetectors are presented. For the bilayer photodetector ITO/ZnO(100 nm)/PbS-TBAI(150 nm)/Au, a responsivity of 3.6 A/W with a specific detectivity of 9.8 × 10¹² Jones was obtained under 0.1 mW/cm² white light illumination at zero bias (i.e. in self-powered mode). Meanwhile, the photocurrent was enhanced to an On/Off current ratio of 10⁵ at zero bias with an open circuit voltage of 0.53 V for trilayer photodetector ITO/ZnO(100 nm)/PbS-TBAI(150 nm)/CsPbI₃(250 nm)/Au, in which the CsPbI₃ NRs layer works as the interfacial layer. As a result, a specific detectivity of 4.5 × 10¹³ Jones with a responsivity of 11.12 A/W was obtained under 0.1 mW/cm² white light illumination, as well as the rising/decaying time of 0.57 s/0.41 s with excellent stability and reproducibility upto four weeks in air. The enhanced-performance is ascribed to the mismatch bandgap between PbS-TBAI/CsPbI₃ interface, which can suppress the carrier recombination and provide efficient transport passages for charge carriers. Thus, it provides a feasible and efficient method for high-performance photodetectors.

Key words: Perovskite, Interfacial layer, Charge carrier recombination, Built-in potential, Charge carrier separation, Self-powered photodetector

Muhammad Imran Saleem, Shangyi Yang, Attia Batool, Muhammad Sulaman, Chandrasekar Perumal Veeramalai, Yurong Jiang, Yi Tang, Yanyan Cui, Libin Tang, Bingsuo Zou. CsPbI₃ nanorods as the interfacial layer for high-performance, all-solution-processed self-powered photodetectors[J]. J. Mater. Sci. Technol., 2021, 75: 196-204.

Figures/Tables 8

Fig. 1. (a) Absorption spectra of ZnO NPs (in DMSO), CsPbI3 NRs (in n-octane) and PbS QDs (in n-octane). (b) Absorption spectra of bilayer device (ITO/ZnO/PbS QDs) and trilayer device (ITO/ZnO/PbS QDs/CsPbI3), (c) XRD pattern of CsPbI3 NRs film, and the inset show the NRs solution dispersed in n-octane, and (d) XRD pattern of PbS QDs film.

Fig. 2. SEM images of PbS QDs (a) and CsPbI3 NRs films (b-d), the inset of Fig. 2(c) shows its average length and diameter distribution plot; and TEM images of PbS QDs (e-f). The inset of Fig. 2(e) shows its size distribution plot and the inset of Fig. 2(f) shows its HRTEM image.

Fig. 3. (a) Cross-sectional diagram and (b) SEM image of device B, (c-d) I-V curves of devices A and B in dark and under different illuminations, respectively.

Table 1 Device performance of devices A, B and C at -1.5 V.

Devices	Responsivity	Specific detectivity	External quantum efficiency (EQE)	Rise/decay time*
A	4.9 A/W	1.3 × 10¹³ Jones	8.8 × 10²	0.98/0.47 s
B	19.72 A/W	8.0 × 10¹³ Jones	3.3 × 10³	0.68/0.45 s
C	18.64 A/W	5.7 × 10¹³ Jones	3.1 × 10³	0.80/0.37 s

Fig. 4. (a-b). Responsivity and specific detectivity under different light intensity for devices A and B. (c-d) The rising/decaying time for devices A and B under 0.2 mW/cm2 white light illumination at -1 V. The onset shows the first-order exponential rise/decay for devices A and B.

Fig. 5. Self-powered mode of devices A and B. (a-b) Photocurrent and responsivity versus light intensity curves for devices A and B at 0 V. (c-d) Current-time curves for devices A and B under 4 mW/cm2 white light illumination at zero bias.

Table 2 Key parameters of self-powered photodetectors in this work and previously work.

Structure	Light Intensity	Raise/Fall time	R (A/W)	D* (Jones)	Ref.
ITO/ZnO/PbS-TBAI/CsPbI₃/Au	0.1 mW/cm²	0.54/0.45 s*	11.12	4.5 × 10¹³	This Work
ITO/CdS NRs/CsPbBr₃/Au	85 μW/cm² (405 nm)	0.3/0.25s	0.086	6.2 × 10¹¹	[4]
ITO/SnO₂/CsPbBr₃/PMAA/PTAA/Au	0.64 μW/cm² (473 nm)	0.4/0.43ms	0.3	1 × 10¹³	[16]
ITO/PEDOT:PSS/Perovskite/PCBM/Al	1 mW/cm² (550 nm)	600/600ns	---	4.0 × 10¹⁴	[33]
FTO/NiO/MgO/ZnO/Au	0.2 mW/cm² (378 nm)	2.0/26.0ms	0.07	5.84 × 10¹¹	[36]
FTO/CdS/Perovskite/Spiro-OMeTAD /Ag	4.57 μW/cm² (550-750 nm)	0.54/2.21ms	0.48	2.1 × 10¹³	[37]
ITO/SnO₂/CsPbBr₃/PTAA/Au	6 × 10^-4 W/cm² (473 nm)	30/39μs	0.216	7.23 × 10¹²	[38]
FTO/TiO₂/Ag NWs	3.18 μW/cm² (200-400 nm)	44 ns/1.85μs	0.032	6.0 × 10¹¹	[39]
Al/Si/SiO₂/CH₃NH₃PbI₃/Pt	5 mW/cm² (white light)	25.8/0.62ms	---	8.8 × 10¹⁰	[40]
Au/CH₃NH₃PbI₃/Ag	9 μW/cm² (520 nm)	13.8/16.1μs	0.16	1.3 × 10¹²	[41]
ITO/SnO₂/CsPbI₃/Au	3.82 μW/cm² (400-600 nm)	5.7/6.2ms	0.1	1 × 10¹²	[42]

Fig. 6. (a) Gradient energy band diagram of trilayer ZnO/PbS-TBAI/CsPbI3 heterojunction. (b) Electron blocking interface formed at CsPbI3/Au interface, tilting the band upward to facilitate hole-extraction and electron-blocking.

References 42

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CsPbI₃ nanorods as the interfacial layer for high-performance, all-solution-processed self-powered photodetectors

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