Influence of a UV-ozone treatment on amorphous SnO2 electron selective layers for highly efficient planar MAPbI3 perovskite solar cells

doi:10.1016/j.jmst.2020.04.054

Abstract

Abstract:

The effect of ultraviolet-ozone (UVO) irradiation on amorphous (am) SnO₂ and its impact on the photoconversion efficiency of MAPbI₃-based perovskite solar cells were investigated in detail. UVO treatment was found to increase the amount of chemisorbed oxygen on the am-SnO₂ surface, reducing the surface energy and contact angle. Physicochemical changes in the am-SnO₂ surface lowered the Gibbs free energy for the densification of perovskite films and facilitated the formation of homogeneous perovskite grains. In addition, the Fermi energy of the UVO-treated am-SnO₂ shifted upwards to achieve an ideal band offset for MAPbI₃, which was verified by theoretical calculations based on the density functional theory. We achieved a champion efficiency of 19.01 % with a statistical reproducibility of 17.01 ± 1.34 % owing to improved perovskite film densification and enhanced charge transport/extraction, which is considerably higher than the 13.78 ± 2.15 % of the counterpart. Furthermore, UVO-treated, am-SnO₂-based devices showed improved stability and less hysteresis, which is encouraging for the future application of up-scaled perovskite solar cells.

Key words: UV-ozone, Amorphous SnO₂, Electron selective layers, Planar perovskite solar cells, Hysteresis

Kyungeun Jung, Du Hyeon Kim, Jaemin Kim, Sunglim Ko, Jae Won Choi, Ki Chul Kim, Sang-Geul Lee, Man-Jong Lee. Influence of a UV-ozone treatment on amorphous SnO₂ electron selective layers for highly efficient planar MAPbI₃ perovskite solar cells[J]. J. Mater. Sci. Technol., 2020, 59: 195-202.

Figures/Tables 6

Fig. 1. (a) XRD patterns of uam-SnO2 and am-SnO2 films, (b) 2D GISAXS pattern of an uam-SnO2 film (after UVO irradiation), and (c) HRTEM image of uam-SnO2 film with a SAED ring pattern (inset: sample processed by FIB). Core level XPS spectra of uam-SnO2 and am-SnO2 films: XPS narrow scan of the Sn3d (d, e) and O1 s (f, g) regions.

Fig. 2. (a, b) AFM images of am-SnO2 and uam-SnO2 ESL deposited on FTO glass, (c, d) contact angles of am-SnO2 and uam-SnO2 substrates, and (e, f) surface SEM images of MAPbI3 layer on am-SnO2 and uam-SnO2, respectively.

Fig. 3. Cross-sectional FE-SEM images showing the planar device architecture of solar cells based on (a) am-SnO2 and (b) uam-SnO2 ESLs. (c―f) Variations in Voc, Jsc, FF, and PCE of two cells based on am-SnO2 and uam-SnO2. The UVO treatment time of uam-SnO2 was 25 min.

Fig. 4. (a) SSPL spectra of a structure of glass/FTO/ESL/perovskite (ESL: uam-SnO2 and am-SnO2), (b) J―V curves of champion solar cells fabricated using am-SnO2 and uam-SnO2 as the ESLs, (c) the EQE of two cells, (d, e) hysteresis behaviors of the uam-SnO2-based and am-SnO2-based devices, (f) operational stability results of two cells (without encapsulation) under continuous AM 1.5 G illumination in 50 % humidity and 25 °C in ambient air.

Fig. 5. (a) Nyquist plot of full devices using am-SnO2 and uam-SnO2, (b) equivalent circuit model, (c) enlarged Nyquist plot (high frequency region) of the am-SnO2 and uam-SnO2 films, and (d) variation in Rrec of full devices using am-SnO2 and uam-SnO2 as the ESLs.

Fig. 6. (a, b) UPS spectra representing the Ecut-off and EF,edge of am-SnO2 and uam-SnO2 films, respectively, (c) band diagram showing the complete band offsets of the full devices incorporating am-SnO2 or uam-SnO2 as the ESL, (d,e) amorphous structures of uam-SnO2, am-SnO2 based on 3 × 3 × 3 supercell, (f) DOS of uam-SnO2, am-SnO2.

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Influence of a UV-ozone treatment on amorphous SnO₂ electron selective layers for highly efficient planar MAPbI₃ perovskite solar cells

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