Ultra-smooth CsPbI2Br film via programmable crystallization process for high-efficiency inorganic perovskite solar cells

doi:10.1016/j.jmst.2020.05.073

Abstract

Abstract:

CsPbI₂Br is an ideal inorganic perovskite material with a reasonable bandgap for solar cell applications because of its advantage of superior thermal and phase stability. However, the performance of CsPbI₂Br based solar cells highly relied on the perovskite crystallization process along with the interfacial contact engineering process between CsPbI₂Br perovskite and charge-transporting layers. In this work, a programmable crystallization method is developed to obtain ultra-smooth CsPbI₂Br perovskite film with a well-engineered contact interface in perovskite solar cells. This method combines a pre-stand-by process with a programmable gradient thermal engineering process, which mediates the crystal growth dynamics process of CsPbI₂Br perovskite by controlling the release of dimethyl sulfoxide (DMSO) from its coordinates with the perovskite film, leading to high-quality CsPbI₂Br film with large-scale crystalline grains, reduced surface roughness, and low trap density. Fabricated perovskite devices based on CsPbI₂Br film obtained by this method deliver power conversion efficiency of 14.55 %; meanwhile, the encapsulated CsPbI₂Br perovskite device achieves a maximum efficiency of 15.07 %. This decent solar conversion efficiency demonstrates the effectiveness of the programmable crystallization method used in this work, which shows great potential as a universal approach in obtaining high-quality CsPbI₂Br perovskite films for fabricating high-efficiency inorganic perovskite solar cells.

Key words: CsPbI₂Br, Ultra-smooth morphology, Interface, Crystallization, Inorganic perovskites

Fu Zhang, Zhu Ma, Taotao Hu, Rui Liu, Qiaofeng Wu, Yu Yue, Hua Zhang, Zheng Xiao, Meng Zhang, Wenfeng Zhang, Xin Chen, Hua Yu. Ultra-smooth CsPbI₂Br film via programmable crystallization process for high-efficiency inorganic perovskite solar cells[J]. J. Mater. Sci. Technol., 2021, 66: 150-156.

Figures/Tables 7

Fig. 1. Schematic diagram of preparing CsPbI2Br film with solvent control growth (SCG), gradient thermal annealing (GTA), and solvent-releasing-control crystallization (SRCC) methods.

Fig. 2. (a) XRD patterns of CsPbI2Br prepared via SCG, GTA, and SRCC methods. SEM images of the GTA thin film in the local area without stripes (b) and with stripes (c).

Fig. 3. SEM and AFM images of CsPbI2Br films deposited on ITO/SnO2 substrates with three different preparing methods, SCG (a, d), GTA (b, e), SRCC (c, f).

Fig. 4. (a) Steady-state PL spectra and (b) time-resolved PL decay curves of CsPbI2Br films deposited on ITO/SnO2 substrate with three different preparing methods.

Fig. 5. Jsc (a) and Voc (b) versus light intensity for SCG, GTA, and SRCC devices. (c) The dark I-V curves of the electron-only devices (ITO/SnO2/perovskite/PCBM/Ag) with SCG, GTA, and SRCC films. (d) Nyquist plots of devices with SCG, GTA, and SRCC films.

Fig. 6. (a) The J-V responses of the SCG, GTA, and SRCC devices. (b) J-V characteristic of the best-performing encapsulated SRCC device.

Table 1 Performance parameters of PSCs based on CsPbI2Br with SCG, GTA, and SRCC films.

Methods	V_oc (V)	J_sc (mA/cm²)	FF (%)	PCE (%)
SCG	1.16	15.66	69.98	12.73
GTA	1.17	14.44	68.93	11.73
SRCC	1.23	16.41	71.80	14.55

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Ultra-smooth CsPbI₂Br film via programmable crystallization process for high-efficiency inorganic perovskite solar cells

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