J. Mater. Sci. Technol. ›› 2020, Vol. 44: 42-47.DOI: 10.1016/j.jmst.2019.10.019
• Research Article • Previous Articles Next Articles
Min Guoa, Cheng Yanga, Dong Gaoa, Qiang Lia, Aihua Zhanga, Jiajun Fengc, Hui Yanga, Ruiqiang Taoa, Zhen Fana, Min Zenga, Guofu Zhoubc, Xubing Lua*(), J.- M. Liuad
Received:
2019-08-14
Revised:
2019-09-13
Accepted:
2019-10-08
Published:
2020-05-01
Online:
2020-05-21
Contact:
Xubing Lu
Min Guo, Cheng Yang, Dong Gao, Qiang Li, Aihua Zhang, Jiajun Feng, Hui Yang, Ruiqiang Tao, Zhen Fan, Min Zeng, Guofu Zhou, Xubing Lu, J.- M. Liu. A flexible and high temperature tolerant strain sensor of La0.7Sr0.3MnO3/Mica[J]. J. Mater. Sci. Technol., 2020, 44: 42-47.
Fig. 1. (a) Schematic diagram of preparation processes of La0.7Sr0.3MnO3/Mica hetero-structure; (b) cross-sectional SEM image of the mica sheet; (c) AFM surface morphology of the La0.7Sr0.3MnO3 film on mica; (d) XRD pattern of La0.7Sr0.3MnO3/mica hetero-structure.
Fig. 2. (a) Resistance changes (ΔR/R0 (%)) upon different bending radius (the inset shows a schematic diagram of the resistance measurement setup during bending state); (b) the instantaneous change of the resistance under three different bending radius; (c) repetitive measurement of the resistance changes over 8 h bending time under bending radius of 8 mm. the three top figures show some typical cycles at the initial, intermediate, and ending stages of the testing process, respectively.
Fig. 3. (a) Temperature dependent resistances under different bending radius of curvature; (b) time-dependent resistances under different bending states at 20 K; (c) resistance as a function of bending radius of curvature at different high temperatures; (d) temperature-dependent resistance changes under different bending states.
Fig. 4. (a) Temperature dependence of the resistance at 0 T and 1 T magnetic field; (b) magnetic field dependent MR% at different temperatures for the LSMO thin film; resistance-magnetic field characteristics of LSMO thin films under different bending radius of curvature at 20 K (c) and 300 K (d).
Fig. 5. (a) Resistance change of the sensor during the finger bending/unbending cycles (the inset shows the actual photograph of the LSMO/Mica sensor fixed on fingers during the bending and unbending states); (b) time dependent MR change upon different magnetic field intensity or distance between magnet and sensor (the inset is a schematic diagram of the measurement setup for the magnetic signal).
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