J. Mater. Sci. Technol. ›› 2020, Vol. 49: 1-6.DOI: 10.1016/j.jmst.2020.01.049

• Research Article •     Next Articles

Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment

Li Zhanga,c, Zhong Xua, Jia Hana, Lei Liua, Cong Yea,*(), Yi Zhoua, Wen Xionga, Yanxin Liua, Gang Heb,*()   

  1. a Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Hubei Key Laboratory of Applied Mathematics, Wuhan, 430062, China
    b School of Physics and Materials Science, Radiation Detection Materials & Device Lab, Anhui University, Hefei, 230039, China
    c School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, 300072, China
  • Received:2019-11-08 Revised:2019-12-22 Accepted:2020-01-15 Published:2020-07-15 Online:2020-07-17
  • Contact: Cong Ye,Gang He

Abstract:

With the demand of flat panel display development, utilizing the non-volatile memory devices based on indium-gallium-zinc-oxide (IGZO) film may be integrated with IGZO thin film transistors (TFTs) to accomplish system-on-panel applications. In this work, 1 × 1 μm2 via hole structure IGZO based memory device was fabricated and the resistive switching (RS) behavior was investigated. By inserting a nitrogen doping layer IGZO:N by plasma treatment in Pt/IGZO/TiN device, highly improved RS performance including lower forming voltage, remarkable uniformity, large memory window of 102, retention property of 104 s at 125 °C, excellent pulse endurance of 107 cycles were achieved. The X-ray photoelectron spectroscopy analysis indicates that plasma doping method can evenly dope nitrogen and induce more non-lattice oxygen in the IGZO film. It is deduced that the N atoms of the inserting layer can influence the random formation of oxygen vacancy type conducting filaments, which results in more stable and uniform performance.

Key words: Memory device, Resistive switching, Plasma treatment, Indium-gallium-zinc-oxide, Memristor