J. Mater. Sci. Technol. ›› 2016, Vol. 32 ›› Issue (1): 1-11.DOI: 10.1016/j.jmst.2015.10.018
• Orginal Article • Next Articles
Cong Ye1, Jiaji Wu1, Gang He2, Jieqiong Zhang3, Tengfei Deng1, Pin He1, Hao Wang1
Received:
2015-07-19
Revised:
2015-08-26
Online:
2016-01-19
Supported by:
Cong Ye, Jiaji Wu, Gang He, Jieqiong Zhang, Tengfei Deng, Pin He, Hao Wang. Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review[J]. J. Mater. Sci. Technol., 2016, 32(1): 1-11.
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