J. Mater. Sci. Technol. ›› 2020, Vol. 48: 1-8.DOI: 10.1016/j.jmst.2019.10.040
• Research Article • Next Articles
Wenjing Longa,b, Haining Lia,b, Bing Yanga,*(), Nan Huanga, Lusheng Liua, Zhigang Gaic, Xin Jianga,*()
Received:
2019-08-14
Accepted:
2019-10-24
Published:
2020-07-01
Online:
2020-07-13
Contact:
Bing Yang,Xin Jiang
Wenjing Long, Haining Li, Bing Yang, Nan Huang, Lusheng Liu, Zhigang Gai, Xin Jiang. Superhydrophobic diamond-coated Si nanowires for application of anti-biofouling’[J]. J. Mater. Sci. Technol., 2020, 48: 1-8.
Microwave power (kW) | Gas pressure (mbar) | Processing time (h) | H2 flow rate (sccm) | CH4 flow rate (sccm) | |
---|---|---|---|---|---|
Si-h | 6 | 30 | 2 | 400 | 0 |
SiNWs-h | 6 | 30 | 2 | 400 | 0 |
SiNWs-g | 6 | 30 | 2 | 400 | 12 |
SiNWs-d | 6 | 30 | 2 | 400 | 12 |
Table 1 Parameters of surface treatment of Si wafer and nanowires.
Microwave power (kW) | Gas pressure (mbar) | Processing time (h) | H2 flow rate (sccm) | CH4 flow rate (sccm) | |
---|---|---|---|---|---|
Si-h | 6 | 30 | 2 | 400 | 0 |
SiNWs-h | 6 | 30 | 2 | 400 | 0 |
SiNWs-g | 6 | 30 | 2 | 400 | 12 |
SiNWs-d | 6 | 30 | 2 | 400 | 12 |
Fig. 1. SEM morphology and cross section of surface-modified sample of Si NWs: (a) and (b) As-prepared sample by MACE methods (SiNWs-0); (c) and (d) Treatment of Si NWs by H2 gas plasma (SiNWs-h); (e) and (f) Treatment of Si NWs by CH4/H2 gas plasma forming graphite-coating nanowires (SiNWs-g); (g) and (h) Treatment of Si NWs by CH4/H2 gas plasma forming diamond-coating nanowires (SiNWs-d).
Fig. 4. Si 2p XPS spectra of surface-modified samples of Si NWs: (a) SiNWs-0 and (b) SiNWs-h; C1s XPS spectra of the samples of diamond-decorated (c) and graphite-decorated (d) Si NWs.
Fig. 5. Water contact angle images of the as-prepared (a) and surface-modified (b) Si wafer; (c)-(f) water contact angle images of as-prepared and surface modified Si NWs: (c) SiNWs-0, (d) SiNWs-h, (e) SiNWs-g, and (f) SiNWs-d.
Fig. 6. Biofouling performance of Si wafers and different surface-modified nanowires before immersion (0d) and after immersion for 14 days: (a) and (b) As-prepared Si wafer; (c) and (d) Modified Si wafer by H2 gas plasma, Si-h; (e) and (f) As-prepared Si NWs by MACE, SiNWs-0; (g) and (h) Modified Si NWs by H2 gas plasma, SiNWs-h; (i) and (j) Graphite-coated Si NWs, SiNWs-g; (k) and (l) Diamond-coated Si NWs, SiNWs-d.
Fig. 7. (a-d) Fluorescence microscopy images of chlorella after 2 days of culture on different surface-modified SiNWs: (a) As-prepared Si NWs by MACE, SiNWs-0; (b) Modified Si NWs by H2 gas plasma, SiNWs-h; (c) Graphite-coated Si NWs, SiNWs-g; (d) Diamond-coated Si NWs, SiNWs-d. (e) Quantitative evaluation of the number of adhered chlorella on different surface-modified SiNWs.
Fig. 8. (a) Mechanical properties of different surface-modified SiNWs samples under the load of 1?N using scratching experiment. High friction force in the SiNWs-d sample demonstrates that the Si nanowires coated with diamond possess better mechanical strength in comparison with other samples. The SEM morphology of SiNWs-0 (b) and SiNW-d (c) samples after immersion for 14 days. The unchanged morphology of SiNWs-d also implies good robustness of the nanowires with the coating of diamond.
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