Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique

Abstract

Abstract: Hexagonally well-faceted microcrystals of ZnO have been grown by thermal evaporation of Zn powder in oxygen ambient at 700 °C under atmospheric pressure. It has been observed that the properties (size and quality) of ZnO microcrystals have a strong dependence on the reactor temperature at which the oxygen gas is admitted into the growth zone. The microcrystals grown with oxygen admittance at 450 °C have a length of 1 ¹m and a diameter of 0.75 μm while that grown with oxygen admittance at 600 °C have a length of 1.5-2 μm and a diameter of 1 μm. Room temperature photoluminescence spectra show a ultraviolet (UV) emission peak at 385 nm with a green band emission at around 500 nm. The UV-to-green band emission ratio for the microcrystals grown with oxygen admittance at 450 °C is observed to be 1.25 and the ratio decreases to 0.45 for the sample grown with oxygen admittance at 600 °C.

Key words: ZnO microcrystals, Thermal evaporation, Scanning electron microscopy, Transmission electron microscopy, Room temperature photoluminescence

K.M.K. Srivatsa, Deepak Chhikara, M. Senthil Kumar. Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique[J]. J Mater Sci Technol, 2012, 28(4): 317-320.

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