Realizing Zinc Blende GaAs/AlGaAs Axial and Radial Heterostructure Nanowires by Tuning the Growth Temperature

J Mater Sci Technol ›› 2011, Vol. 27 ›› Issue (6): 507-512.

• Nanomaterials and Nanotechnology • Previous Articles Next Articles

Realizing Zinc Blende GaAs/AlGaAs Axial and Radial Heterostructure Nanowires by Tuning the Growth Temperature

Jingwei Guo, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Wei Wang, Yongqing Huang, Qi Wang, Xia Zhang

Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China

Received:2010-12-24 Revised:2011-03-04 Online:2011-06-28 Published:2011-06-22
Contact: J.W. Guo
Supported by:
the National Basic Research Program of China (No. 2010CB327600), the Programme of Introducing Talent of Discipline to Universities of China (No. B07005), the National High Technology R&D Program of China (2009AA03Z405, 2009AA03Z417), New Century Excellent Talents in University (NCET-08-0736) and Chinese Universities Scientific Fund (BUPT2009RC0409, BUPT2009RC0410).

Abstract

Abstract: Vertical zinc blende GaAs/AlGaAs heterostructure nanowires were grown at different temperatures by metalorganic chemical vapor deposition via Aussisted vapor-liquid-solid mechanism. It was found that radial growth can be enhanced by increasing the growth temperature. The growth of radial heterostructure can be realized at temperature higher than 500°C, while the growth temperature of axial heterostructure is lower than 440°C. The room temperature photoluminescence properties of the nanowires were investigated and the relevant growth mechanism was discussed.

Key words: Nanowire, GaAs, AlGaAs, Heterostructure, Zinc blende

Jingwei Guo, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Wei Wang, Yongqing Huang, Qi Wang, Xia Zhang. Realizing Zinc Blende GaAs/AlGaAs Axial and Radial Heterostructure Nanowires by Tuning the Growth Temperature[J]. J Mater Sci Technol, 2011, 27(6): 507-512.

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Realizing Zinc Blende GaAs/AlGaAs Axial and Radial Heterostructure Nanowires by Tuning the Growth Temperature

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