J Mater Sci Technol ›› 2010, Vol. 26 ›› Issue (3): 223-227.

• Mechanical and Functional Properties of Materials • Previous Articles     Next Articles

Development and Characterization of Sol-gel Derived Al Doped ZnO/p-Si Photodiode

Babita Gupta, Anubha Jain, R.M. Mehra   

  1. Department of Electronic Science, University of Delhi South Campus, New Delhi-110 021, India
  • Received:2009-04-08 Revised:2009-08-08 Online:2010-03-28 Published:2010-03-22
  • Contact: Mehra R.M.
  • Supported by:

    Department of Science and Technology (DST) under the project SR/WOS-A/PS-06/2006
     Defence Research and Development Organization (DRDO), Govt. of India under the project ERIP/ER/0503515/M01/847

Abstract:

The effect of Al doping on the J-V characteristics sol-gel derived of ZnO/p-Si photodiodes was investigated. The resistivity of Si was 0.1Ω·cm. ZnO films annealed at 500°C were of the best quality. To investigate the spectral response of the photodiodes, the J-V characteristics were measured under different monochromatic lights at wavelength 420, 530, 570 and 630 nm. The diodes exhibit strong responsivity in the blue region at 420 nm. The responsivity is 0.22 A/W for Al doped (0.8 wt pct) photodiode, whereas for the undoped
photodiode, it was much lower. An estimate of the responsivity as a function of wavelength has been made in terms of the width of depletion region of photodiodes.

Key words: Sol-gel, Al doping, Photodiode, J-V characteristics, Responsivity