[1 ] F. Chu, M. Lei, S.A. Maloy, J.J. Petrovic and T.E. Mitchell: Acta Mater., 1996, 44, 3035.
[2 ] F. Maglia, C. Milanese, U. Anselmi-Tamburin, S. Doppiu, G. Cocco and Z.A. Munir: J. Alloy. Compd., 2004, 385, 269.
[3 ] W.D. Liu and E.Z. Luo: Semicond. Technol., 1994, 4(2), 1. (in Chinese)
[4 ] B.M. Ditchek and M. Levinson: Appl. Phys. Lett., 1986, 49, 1656.
[5 ] B.M. Ditchek, J. Hefter and T.R. Middleton: J. Cryst. Growth, 1990, 102, 401.
[6 ] C.J. Cui, J. Zhang, B. Li, M. Han, L. Liu and H.Z. Fu: J. Cryst. Growth, 2007, 299, 248.
[7 ] J.M. Lackner, W. Waldhauser, R. Berghauser, R. Ebner, B. Major and T. SchÄoberl: Thin Solid Films, 2004, 453, 195.
[8 ] H. Bei and E.P. George: Acta Mater., 2005, 53, 69.
[9 ] J.J. Hughesa and P. Trtik: Mater. Charact., 2004, 53, 223.
[10] C.J. Cui, J. Zhang, Z.W. Jia, H.J. Su, L. Liu and H.Z.v Fu: J. Cryst. Growth, 2008, 310, 71.
[11] M.Y. Liu, J.H. Liu and S.J. Zhang: Semiconductor Optoelectronics, 2000, 21, 132. (in Chinese)
[12] R.M.A. Fatah: Sensors Actuators, 1992, A33, 229.
[13] I. Engstrom and B. Lonnberg: J. Appl. Phys., 1998, 63, 4476.
[14] Y.H. Liu: J. Civil Avi. Uni. China, 2001, 19, 39. (in Chinese)
[15] S.P. Simner, P. Xiao and B. Derby: J. Mater. Sci., 1998, 33, 5557.
[16] W.C. Oliver and G.M. Pharr: J. Mater. Res., 1992, 7, 1564.
[17] K. Mohan Kumar, V. Kripesh, L. Shen, K.Y. Zeng and A.O.T. Andrew: Mater. Sci. Eng A, 2006, 423, 57.
[18] C.M. Chan, G.Z. Cao, H. Fong and M. Sarikaya: J. Mater. Res., 2000, 15, 148.
[19] F. Songa, K.W. Xiao, K. Baib and Y.L. Bai: Mater. Sci. Eng. A, 2007, 457, 254.
[20] R. Saha and J.A. Barnard: J. Cryst. Growth, 1997, 174, 495.
[21] A.C. Raghuram and R.F. Bunshah: J. Vac. Sci. Technol., 1972, 9, 1389.
[22] P. Delobelle, G.S. Wang, E. Fribourg-Blanc and D. Remiens: Surf. Coat. Technol., 2006, 201, 3155.
[23] C.J. Cui: Microstructure and Property of Si-TaSi2 Eutectic in situ Composite for Field Emission, Master Dissertation, Northwestern Polytechnical University,
Xi0an, China, 2005. (in Chinese) |