J Mater Sci Technol ›› 2009, Vol. 25 ›› Issue (05): 699-702.

• Articles • Previous Articles     Next Articles

Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers

M. Wang, B. Zhang, G.P. Zhang, Q.Y. Yu, C.S. Liu   

  1. 1) Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
    2) Key Laboratory for Anisotropy and Texture of Materials of Ministry of Education, School of Materials & Metallurgy, Northeastern University, 3-11 Wenhua Road, Shenyang 110004, China
  • Received:2008-07-01 Revised:2009-03-03 Online:2009-09-28 Published:2009-10-10
  • Supported by:

    the National Basic Research Program of China (No. 2004CB619303)
    partially by the National Natural Science Foundation of China (No. 50571103 and 50971125)
    Changjiang Scholars and Innovative Research Team in Northeastern University (IRT0713)

Abstract:

The electrical resistivity of Cu/Ta multilayers deposited by radio-frequency magnetron sputtering on a polyimide substrate was investigated as a function of monolayer thickness. It is found that the resistivity of the multilayer increases with decreasing monolayer thickness from 500 nm to 10 nm. Two significant effects of layer interface
scattering and grain boundary scattering were identified to dominate electronic transportation behavior in the Cu/Ta multilayers at different length scales. The electrical resistivity of the multilayer with monolayer thickness ranging from nanometer to submicron scales can be well described by a newly-proposed Fuchs-Sandheimair
(F-S) and Mayadas-Shatzkes (M-S) combined model.

Key words: Electrical resistivity, Multilayer, Interface, Grain boundary scattering, Length scale