J Mater Sci Technol ›› 2006, Vol. 22 ›› Issue (06): 807-810.

• Research Articles • Previous Articles     Next Articles

Electrical Properties of Sputter-deposited ZrO2-based Pt/ZrO2/Si Capacitors

Keunbin YIM, Yeonkyu PARK, Anna PARK, Namhee CHO, Chongmu LEE   

  1. Department of Materials Science and Engineering, Inha University, Incheon 402-751, Korea
  • Received:2006-04-06 Revised:2006-06-23 Online:2006-11-28 Published:2009-10-10
  • Contact: Chongmu Lee

Abstract: Pt/ZrO2/Si sandwich structures where ZrO2 is deposited by radio frequency (r.f.) magnetron sputtering using a Zr target in an atmosphere of O2/Ar gas mixture, were fabricated and the effects of the O2/Ar flow ratio in the reactive sputtering process, the annealing temperature, the ZrO2 film thickness on the structure, the surface roughness of ZrO2 films and the electric properties of Pt/ZrO2/Si metal-oxide-semiconductor (MOS) capacitors were investigated. The optimum process parameters of the Pt/ZrO2/Si capacitor based on reactively sputtered-ZrO2 determined in such a way as the capacitance is maximized and the leakage current, the oxide charge, and the interface trap density are minimized that is the O2/Ar flow ratio of 1.5, the annealing temperature of 800℃, and the film thickness of 10 nm. Also the conduction mechanism in the Pt/ZrO2/Si capacitor has been discussed.

Key words: ZrO2, Gate dielectrics, Radio frequency, Magnetron sputtering