J. Mater. Sci. Technol. ›› 2015, Vol. 31 ›› Issue (8): 822-827.DOI: 10.1016/j.jmst.2015.07.013

• Orginal Article • Previous Articles     Next Articles

Improving the Thermal Stability of Cu3N Films by Addition of Mn

Xiaoyan Fan1, Zhenjiang Li2, Alan Meng3, Chun Li4, *, Zhiguo Wu5, Pengxun Yan5   

  1. 1 Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao 266061, China; 2 Key Laboratory of Polymer Material Advanced Manufacturing Technology of Shandong Province, Qingdao University of Science and Technology, Qingdao 266061, China; 3 College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266061, China; 4 Department of Physics, Ocean University of China, Qingdao 266100, China; 5 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  • Received:2015-03-31 Online:2015-08-20
  • Contact: * Corresponding author. Ph.D.; Tel.: t86 532 66781953; Fax: t86 532 66781204.E-mail address: lichun0303@126.com (C. Li).
  • Supported by:
    This work was supported by the Natural Science Foundation of Shandong Province (Grant Nos. ZR2013EMQ006, ZR2011EMZ001, ZR2011EMQ011), the National Natural Science Foundation of China (Grant Nos. 51272117, 51172115, 60907007), the Research Award Fund for Outstanding Young Scientists of Shandong Province (Grant No. BS2013CL040), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20123719110003), the Tackling Key Program of Science and Technology in Shandong Province (Grant No. 2012GGX10218), and the Application Foundation Research Program of Qingdao (Grant Nos. 13-1-4-117-jch and 14-2-4-29-jch).

Abstract: Mn-doped Cu3N films were deposited by cylindrical magnetron sputtering equipment on the common glass at room temperature. The incorporation of Mn can change the preferred growth orientation from Cu-rich plane (111) to N-rich plane (100) due to the improvement of nitridation of Cu. The shrinkage of the lattice and the X-ray photoelectron spectroscopy results reveal that Mn should replace Cu atoms in the lattice or be segregated in the grain boundaries. The thickness of Mn-doped film is smaller than that of the pure one due to the less physisorption of N species among the columnar grains. The mean grain size and the energy gap become larger with increasing Mn concentration to 2.2 at.% and then decrease when the concentration of Mn is higher than 2.2 at.%. Notably, weak doping of 1.5 at.% Mn successfully promotes the decomposed temperature by ~50°C. According to the results of XRD and SEM for Mn-doped films annealed in vacuum, a possible decomposed mechanism with increasing the annealing temperature is proposed.

Key words: Magnetron sputtering, Cu3N film, Mn-doped, Thermal stability