Abstract: AlN nanowires with a hexagonal structure were synthesized using an improved arc-discharge method and their microstructures were characterized using a high-resolution transmission electron microscope. The synthesized AlN nanowires were of various shapes. Their diameters ranged from 20 to 110~nm and the lengths were up to 20μm. Most of the AlN nanowires were coated by an amorphous layer of aluminum oxide. Fabrication yield was about several grams. The growth mechanism was considered to be a vapor-liquid-solid process and an Al droplet formed on the top of as-grown AlN nanowire played a role of catalyst.

Key words: Arc-discharge, Nanowire, High-resolution transmission electron Microscope (HRTEM)