Metallorganic Vapor Phase Epitaxy of(AlGa)InP on GaAs at Atmospheric Pressure

Abstract

Abstract: High quality (AlGa)InP epilayers lattice matched on GaAs substrates were grown by atmospheric pressure metallorganic vapor phase epitaxy (AP-MOVPE).The relationship between surface morphologies and lattice mismatches was studied.The influence of Al incorporation to the photoluminescence and electronic properties of AlGaInP was measured.The applicability of growth at atmospheric pressure and the passivation of Zn in AlGaInP were discussed.

Key words: MOVPE, GalnP, mismatching, photolummescence, doping

Hongwen REN Baibiao HUANG Shuqin YU Xian'gang XU Shiwen LIU Minhua JIANG Institute of Crystal Materials,Shandong University,Jinan,250100,China. Metallorganic Vapor Phase Epitaxy of(AlGa)InP on GaAs at Atmospheric Pressure[J]. J Mater Sci Technol, 1993, 9(6): 427-430.

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Metallorganic Vapor Phase Epitaxy of(AlGa)InP on GaAs at Atmospheric Pressure

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