J Mater Sci Technol ›› 1993, Vol. 9 ›› Issue (4): 297-300.

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SIMS Studies of Tracer Diffusion of Al in Thin Film Nanocrystalline Cu

Honggang JIANG Jingtang WANG Bingzhe DING Qihong SONG State Key Lab.of RSA,Institute of Metal Research,Academia Sinica,Shenyang,110015,China   

  • Received:1993-07-28 Revised:1993-07-28 Online:1993-07-28 Published:2009-10-10

Abstract: Diffusion of Al in thin film nanocrystalline Cu(18 nm)has been investigated by means of second ion mass spectroscopy(SIMS).In the experimental temperature ranges from 421 to 773 K,there seem- ingly exists two diffusion mechanisms.The impurity elements O and C are supposed to accumulate to the grain boundaries and inhibit the fast grain boundary diffusion.

Key words: tracer diffusion, nanocrystalline, spectroscopy