[1]H.Morikawa,K.Sassa and S.Asai:Mater.Trans., 1998,39(8),814. [2]S.Asai:in Proc.4th Int.Syrup.on Electromagnetic Processing of Materials(EPM2003),eds.by S.Asai, Y.Fautrelle,P.Gillon and F.Durand,Lyon,France, 2003,1. [3]P.D.Rango,M.Lee,P.Lejay,A.Sulpice,R.Tournier, M.Ingold,P.Germi and M.Pernet:Nature,1991, 349(28),770. [4]H.Yasuda,K.Tokieda and I.Ohnaka:Mater.Trans., 2000,41(8),1005. [5]D.E.Farrell and B.S.Chandrasekhar:Phys.Rev.B., 1987,36(7),4025. [6]N.Masahashi,M.Matsuo and K.Watanabe:J.Mater. Res.,1998,13(2),457. [7]J.K.Choi,H.Ohtsuka,Y.Xu and W.Y.Choo:Scripta Mater.,2000,43(3),221. [8]Cunyou WU,Tingju LU,Bin WEN and Junze JIN:J. Dalian Univ.Technol.,2004,44(4),514.(in Chinese) [9]M.Shimotomai and K.Maruta:Scripta Mater.,2000, 42(5),499. [10]Xintian RAN,Zhongming REN,Kang DENG,Xi LI and Weixuan LI:Chin J.Nonferr.Met.,2005,15(1), 72.(in Chinese) [11]S.Ramanathan,R.Karthikeyan,V.Deepak and G.Ganesan:J.Mater.Sci.Technol.,2006,22(5), 611. [12]H.Zhou,L.Liu,Q.Wang,D.Lu,X.Zeng and W.Ding: J.Mater.Sci.Technol.,2004,20(6),691. [13]Chunjiang WANG,Qiang WANG,Yaqin WANG,Jian HUANG and Jicheng HE:Acta Phys.Sin.,2006, 55(2),648.(in Chinese) [14]Xi LI,Zhongming REN,Yanhui SUN,Jun WANG, Jianbo YU and Weili REN:Acta Metall.Sin.,2006, 42(2),147.(in Chinese) [15]Q.Wang,E.Wang,J.He,K.Hu,K.Takahashi and K.Watanabe:in Proc.4th Int.Syrup.on Elec- tromagnetic Processing of Materials(EPM2003),eds. by S.Asai,Y.Fautrelle,P.Gillon and F.Durand,Lyon, France,2003,464. [16]P.Dold,F.R.Szofran and K.W.Benz:J.Cryst. Growth,2006,291(1),1. [17]H.Yasuda,I.Ohnaka,O.Kawakami,K.Ueno and K.Kishio:ISIJ Int.,2003,43(6),942. [18]T.Sugiyama,M.Tahashi,K.Sassa and S.Asai:ISIJ Int.,2003,43(6),855. [19]G.L.Song and A.Atrens:Adv.Eng.Mater.,1999, 1(1),11. [20]G.L.Song,A.Atrens and M.Dargusch:Corros.Sci., 1999,41(2),249. [21]G.L.Song,A.Atrens,X.L.Wu and B.Zhang:Corros. Sci.,1998,40(10),1769. |