TiN/BN composite with excellent thermal stability for efficiency microwave absorption in wide temperature spectrum

doi:10.1016/j.jmst.2022.04.050

Abstract

Abstract:

High-efficiency and temperature-insensitive microwave absorbing materials (MAMs) are ideal for high-temperature electromagnetic attenuation. Herein, the titanium nitride/boron nitride (TiN/BN) composite with TiN as the loss unit and BN as the impedance matching unit has been constructed by the in-situ synthesis method. The insulating BN not only effectively regulates and optimizes the conductivity and impedance matching of the material but also imparts steady cyclic microwave absorption properties. The steady dielectric loss ensures that TiN/BN composite has robust high-temperature absorption properties at X-band, with a minimum reflection loss (RL_min) of −16.74 dB at 873 K and an effective absorption bandwidth (EAB) of 3.26 GHz in the temperature range of 293-873 K. Compared with the TiN/SiO₂ absorbers with a single system, the TiN/BN/SiO₂ composite keeps reliable high temperature absorbing properties at 873 K. This work confirms that wave-transparent materials for dielectric property modulation can resolve poor temperature stability of effective absorption and non-reusability for high-temperature absorbing materials, providing inspirations for designing efficiency high-temperature microwave absorbers.

Key words: TiN/BN, High-temperature, Microwave absorption, Dielectric properties, Impedance matching

Yupeng Shi, Dan Li, Haoxu Si, Zhiyang Jiang, Mengyuan Li, Chunhong Gong. TiN/BN composite with excellent thermal stability for efficiency microwave absorption in wide temperature spectrum[J]. J. Mater. Sci. Technol., 2022, 130: 249-255.

Figures/Tables 4

Fig. 1. (a) Schematic of the synthesis of TiN and TiN/BN composites. (b) SEM images of TiN (c) and TiN/BN. (d, e) SEM image and elemental mappings of TiN/BN composites. (f) X-ray diffraction patterns and (g) Fourier transforms infrared spectra of TiN and TiN/BN. (h) Optical photograph of TiN/BN/SiO2 composites.

Fig. 2. Microwave absorption performance (RL) of (a) T-10, (b) T-20, (c) T-30, (d) B-10, (e) B-20, and (f) B-30. (g, h) Histogram of maximum EAB and RLmin for TiN/BN/SiO2 composites at different temperatures (293 K and 873 K) compared to that of TiN/SiO2 composites. (i) Optical photograph of waveguide samples with high-temperature resistance and thermal insulation.

Fig. 3. Average complex permittivity value at different temperatures of TiN/SiO2 and TiN/BN/SiO2 composites with different filler contents: (a) T-10 and B-10, (b) T-20 and B-20, (c) T-30 and B-30. (d, e) Change rates of the complex permittivity for TiN/BN/SiO2 composites at different temperatures compared with TiN/SiO2 composites. (f) Room temperature conductivity of TiN/SiO2 and TiN/BN/SiO2 composites with different filler contents. (g, h) Dielectric loss tangent of T-10 and B-20 at different temperatures. (i) Plots of εr′ vs B0 (B0=εr″/f) of T-10 and B-20.

Fig. 4. Cyclic stability of electromagnetic properties and microwave absorption properties. (a, b) Complex dielectric constants of B-20 and T-10 before and after high-temperature testing (293 K). (c, d) Change rate of εr′ and εr″ of T-10 and B-20 after high-temperature testing processes (293 K). (e) XRD of B-30 and T-30 after the high-temperature testing processes (293 K). (f, g) RL of T-10 and B-20 before and after high-temperature testing processes (293 K). (h) Radar chart for comparison of thickness, RLmin, EAB, temperature, and temperature stability between B-20 and reported representative high-temperature microwave absorption materials (CF/SiO2, MWCNTs/polyimide, Graphene/silica, Fe3O4?MWCNTs/SiO2, and ZnO-MWCNT/SiO2).

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