Synergistic band convergence and defect engineering boost thermoelectric performance of SnTe

doi:10.1016/j.jmst.2021.01.040

Abstract

Abstract:

As an eco-friendly thermoelectric material, SnTe has attracted extensive attention. In this study, we use a stepwise strategy to enhance the thermoelectric performance of SnTe. Firstly, AgCl is doped into SnTe to realize band convergence and enlarge the band gap of AgCl-doped SnTe. AgCl-doping also induces dense point defects, strengthens the phonon scattering, and reduces the lattice thermal conductivity. Secondly, Sb is alloyed into AgCl-doped SnTe to further optimize the carrier concentration and simultaneously reduce the lattice thermal conductivity, leading to improved thermoelectric dimensionless figure of merit, ZT. Finally, (Sn_0.81Sb_0.19Te)_0.93(AgCl)_0.07 has approached the ZT value as high as ∼0.87 at 773 K, which is 272 % higher than that of pristine SnTe. This study indicates that stepwise AgCl-doping and Sb-alloying can significantly improve thermoelectric performance of SnTe due to synergistic band engineering, carrier concentration optimization and defect engineering.

Key words: Thermoelectric, SnTe, Stepwise optimize, Band structure, Lattice thermal conductivity

Ximeng Dong, Wenlin Cui, Wei-Di Liu, Shuqi Zheng, Lei Gao, Luo Yue, Yue Wu, Boyi Wang, Zipei Zhang, Liqiang Chen, Zhi-Gang Chen. Synergistic band convergence and defect engineering boost thermoelectric performance of SnTe[J]. J. Mater. Sci. Technol., 2021, 86: 204-209.

Figures/Tables 5

Fig. 1. (a) Powder XRD patterns of the as-sintered (SnTe)1-x(AgCl)x (x = 0, 0.03, 0.05 and 0.07) samples at room temperature and (b) the enlarged (220) peak. (c) SEM-EDS maps of (SnTe)0.93(AgCl)0.07.

Fig. 2. Temperature (T)-dependent (a) σ, (b) S, (c) S2σ, (d) room-temperature S (as a function of nH), (e) κtotal, (f) κe, (g) κl, (h) ZT and (i) ZTave (between 300 K and 773 K) of the as-sintered (SnTe)1-x(AgCl)x (x = 0, 0.03, 0.05 and 0.07) samples.

Fig. 3. Electronic band structures of (a) Sn27Te27, (b) Sn26Te26Ag1Cl1 and (c) Sn25Te25Ag2Cl2. (d) Schematic change of electronic band structures with increasing AgCl content.

Fig. 4. (a) Powder XRD patterns of (Sn1-ySbyTe)0.93(AgCl)0.07 (y = 0, 0.17, 0.19, 0.21) samples. (b) SEM-EDS maps of (Sn0.79Sb0.21Te)0.93(AgCl)0.07.

Fig. 5. Temperature (T)-dependent (a) σ, (b) S, (c) S2σ, (d) nH, (e) κtotal, (f) κe, (g) κl, (h) ZT and (i) ZTave (between 300 K and 773 K) of the as-sintered (Sn1-ySbyTe)0.93(AgCl)0.07 (y = 0, 0.17, 0.19, 0.21) samples.

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