Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles

doi:10.1016/j.jmst.2016.06.029

Abstract

Abstract:

A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO₂, Al₂O₃, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes. Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications.

Key words: Graphene, CVD, Remote catalyzation, SiO₂ nanosphere, Cu nanoparticle

Han Shuangshuang, Yang Fan, Liu Liyue, Zhou Mi, Shan Yongkui, Li Dezeng. Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles[J]. J. Mater. Sci. Technol., 2017, 33(8): 800-806.

Figures/Tables 8

Scheme 1 Schematic illustration of graphene growth mechanism by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition.

Fig. 1. SEM images of monodispersed SiO2 nanoshperes (NSs) coatings (a) before and (b) after growth of graphene at 1000 °C for 20 min and (c) magnified image corresponding to the square area in (b).

Fig. 2. TEM images of (a) G/SiO2 NSs, (b) partly etched G/SiO2 NSs and (c) graphene hollow NSs; (d) HRTEM image of G/SiO2 NSs and corresponding SAED pattern (the inset).

Fig. 3. (a) Raman spectra of G/SiO2 NSs at 1000 °C for different growth time with a time step of 5 min; (b) intensity ratios I2D/IG and ID/IG of graphene on SiO2 NSs as a function of growth time, inset in Fig. 3(b) shows the calculated in-plane crystal size as a function of growth time.

Fig. 4. Raman spectra of G/SiO2 NSs prepared from 850 °C to 1050 °C for 20 min with a temperature step of 50 °C.

Fig. 5. (a) Photograph of anodic aluminum oxide (AAO); SEM images of AAO templates before growth process (b), top view (c) and profile section (d) of graphene-coated anodic aluminum oxide (G/AAO) at 1000 °C for 20 min.

Fig. 6. SEM images of (a) G/AAO and (b) graphene tube after removing the AAO templates; (c) TEM and (d) dark-field images of individual graphene tube; (e) HRTEM image of the folded edge of an individual graphene tube; (f) SAED pattern of the free-standing graphene tube.

Fig. 7. Raman spectra of graphene tubes after etching of AAO template.

References

[1]	K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A.Firsov Science, 306(2004), pp. 666-669
[2]	S. Stankovich, D.A. Dikin, G.H.B.Dommett, K.M. Kohlhaas, E.J. Zimney, E.A. Stach, R.D. Piner, S.T. Nguyen, R.S. Ruoff Nature, 422(2006), pp. 282-286
[3]	C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A.N.Marchenkov Science, 312(2006), pp. 1191-1196
[4]	X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S.K. Banerjee, L. Colombo, R.S.Ruoff Science, 324(2009), pp. 1312-1314
[5]	D. Wan, T. Lin, H. Bi, F. Huang, X. Xie, I. Chen, M. Jiang Adv.Funct. Mater., 22(2012), pp. 1033-1039
[6]	Z. Yan, Z. Peng, Z. Sun, J. Yao, Y. Zhu, Z. Liu, P.M. Ajayan, J.M.Tour ACS Nano, 5(2011), pp. 8187-8192
[7]	L. Liu, H. Zhou, R. Cheng, W. Yu, Y. Liu, Y. Chen, J. Shaw, X. Zhong, Y. Huang, X. Duan ACS Nano, 6(2012), pp. 8241-8249
[8]	Z. Peng, Z. Yan, Z. Sun, J.M.Tour ACS Nano, 5(2011), pp. 8241-8247
[9]	A. Ferrari, J. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. Novoselov, S. Roth Phys.Rev. Lett., 97(2006), p. 187401
[10]	H. Bi, F. Huang, W. Zhao, X. Lü, J. Chen, T. Lin, D. Wan, X. Xie, M. Jiang Carbon, 50(2012), pp. 2703-2709
[11]	S. Lee, K. Lee, Z. Zhong Nano Lett., 10(2010), pp. 4702-4707
[12]	M. Zhou, T. Lin, F. Huang, Y. Zhong, Z. Wang, Y. Tang, H. Bi, D. Wan, J. Lin Adv.Funct. Mater., 23(2013), pp. 2263-2269
[13]	H. Sun, Z. Xu, C. Gao Adv.Mater., 25(2013), pp. 2554-2560
[14]	D.A. Dikin, S. Stankovich, E.J. Zimney, R.D. Piner, G.H. Dommett, G. Evmenenko, S.T. Nguyen, R.S.Ruoff Nature, 448(2007), pp. 457-460
[15]	J. Chen, H. Bi, S. Sun, Y. Tang, W. Zhao, T. Lin, D. Wan, F. Huang, X. Zhou, X. Xie, M. Jiang ACS Appl. Mater. Interface, 5(2013), pp. 1408-1413
[16]	S. Gaddam, C. Bjelkevig, S. Ge, K. Fukutani, P.A. Dowben, J.A.Kelber J. Phys. Condens. Mater., 23(2011), p. 072204
[17]	S. Jerng, D. Yu, Y. Kim, J. Ryou, S. Hong, C. Kim, S. Yoon, D. Efetov, P. Kim, S. Chun J.Phys. Chem. C, 115(2011), pp. 4491-4494
[18]	H. Bi, S. Sun, F. Huang, X. Xie, M. Jiang J.Mater. Chem., 22(2012), pp. 411-416
[19]	J. Chen, Y. Guo, Y. Wen, L. Huang, Y. Xue, D. Geng, B. Wu, B. Luo, G. Yu, Y. Liu Adv.Mater., 25(2013), pp. 992-997
[20]	M.A. Fanton, J.A. Robinson, C. Puls, Y. Liu, M.J. Hollander, B.E. Weiland, M. LaBella, K. Trumbull, R. Kasarda, C. Howsare ACS Nano, 5(2011), pp. 8062-8069
[21]	X. Liu, T. Lin, F. Huang, J. Lin Carbon, 71(2014), pp. 20-26
[22]	P.Y. Teng, C.C. Lu, A.H. Kotone, Y.C. Lin, C.H. Yeh, K. Suenaga, P.W.Chiu Nano Lett., 12(2012), pp. 1379-1384
[23]	W. Stober, A. Fink, E.J.Bohn Colloid Interface Sci., 26(1968), pp. 62-69
[24]	D.Z. Li, C. Symonds, F. Bessueille, J.C. Plenet, A. Errachid, G.M. Wu, J. Shen, J. Bellessa J.Opt. A: Pure Appl. Opt., 11(2009), p. 065601
[25]	F. Geiger, C.A. Busse, R.I.Loehrke Int. J.Thermophys., 8(1987), pp. 425-436
[26]	T. Choudhary, C. Sivadinarayana, C. Chusuei, A. Klinghoffer, D. Goodman J.Catal., 199(2001), pp. 9-18
[27]	S. Takenaka, Y. Shigeta, E. Tanabe, K. Otsuka J.Catal., 220(2003), pp. 468-477.
[28]	W. Zhang, P. Wu, Z. Li, J. Yang J.Phys. Chem. C, 115(2011), pp. 17782-17787
[29]	A. Reina, S. Thiele, X. Jia, S. Bhaviripudi, M.S. Dresselhaus, J.A. Schaefer, J. Kong Nano Res., 2(2009), pp. 509-516
[30]	N.M. Galea, D. Knapp, T. Ziegler J.Catal., 247(2007), pp. 20-33
[31]	J.C. Meyer, A.K. Geim, M.I. Katsnelson, K.S. Novoselov, T.J. Booth, S. Roth Nature, 446(2007), pp. 60-63
[32]	F. Tuinstra, J.L.Koenig J. Chem. Phys., 53(1970), pp. 1126-1130
[33]	A.C. Ferrari, J. Robertson Phys.Rev. B, 61(2000), pp. 14095-14107
[34]	C. Thomsen, S. Reich Phys.Rev. Lett., 85(2000), pp. 5214-5217
[35]	T. Gokus, R.R. Nair, A. Bonetti, M. B?hmler, A. Lombardo, K.S. Novoselov, A.K. Geim, A.C. Ferrari, A. Hartschuh ACS Nano, 3(2009), pp. 3963-3968
[36]	C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H.Harutyunyan, T. Gokus, K.S. Novoselov, A.C.Ferrari Nano Lett., 7(2007), pp. 2711-2717.
[37]	M.O. Goerbig, J.N. Fuchs, K. Kechedzhi, V.I.Fal’koPhys. Rev. Lett., 99(2007), p. 087402
[38]	Y. Kim, J.M. Poumirol, D. Smirnov, N.G. Kalugin, J. Kono, T. Georgiou, Y.J. Kim, K.S. Novoselov, A. Lombardo, A.C. Ferrari, O. Kashuba, V.I.Falko Phys. Rev. Lett., 110(2013), p. 227402
[39]	R. Ferone, J.R. Wallbank, V. Zòlyomi, E. McCann, V.I.Falko Solid State Commun., 151(2011), pp. 1071-1074
[40]	P. Venezuela, M. Lazzeri, F. MauriPhys.Rev. B, 84(2011), p. 035433
[41]	P. May, M. Lazzeri, P. Venezuela, F. Herziger, G. Callsen, J.S. Reparaz, A. Hoffmann, F. Mauri, J. Maultzsch Phys.Rev. B, 87(2013), p. 075402
[42]	M. Zhou, H. Bi, T. Lin, X. Lv, F. Huang, J. Lin J.Mater. Chem. A, 2(2014), pp. 2187-2193
[43]	M. Zhou, H. Bi, T. Lin, X. Lv, D. Wan, F. Huang, J. Lin Carbon, 75(2014), pp. 314-321