[1 ] X.T. Zhou, H.L. Lai, H.Y. Peng, F.C.K. Au, L.S. Liao, N.Wang, I. Bello, C.S. Lee and S.T. Lee: Chem. Phys. Lett., 2000, 58, 318.
[2 ] Y. Zhang, M. Nishitani-Gamo, C. Xiao and T. Ando:J. Appl. Lett., 2002, 91, 6066.
[3 ] H. Seong, H. Choi, S. Lee, J. Lee and D. Choi: Appl. Phys. Lett., 2004, 85, 1256.
[4 ] H. Seong, S. Lee, H. Choi, T. Kim, N. Cho, K. Nahm and S. Lee: Mater. Sci. Forum, 2006, 527-529, 771.
[5 ] R.S. Wagner and W.C. Ellis: Appl. Phys. Lett., 1964, 4, 89.
[6 ] G. Ferro and C. Jacquier: New J. Chem., 2004, 28, 889.
[7 ] I. Leu, M. Hon and Y. Lu: J. Electrochem. Soc., 1999, 146, 184.
[8 ] H. Choi, H. Seong, J. Lee and Y. Sung: J. Cryst. Growth, 2004, 269, 472.
[9 ] B.C. Kang, S.B. Lee and J.H. Boo: Thin Solid Films, 2004, 464-465, 215.
[10] I. Leu, Y. Lu and M. Hon: Mater. Chem. Phys., 1998, 56, 256.
[11] I. Leu and M. Hon: J. Cryst. Growth, 2002, 236, 171.
[12] S. Chattopadhyay, L.C. Chen and K.H. Nanotips: Crit. Rev. Solid State Mater. Sci., 2006, 31, 15.
[13] Z.S. Wu, S.Z. Deng, N.S. Xu, J. Chen, J. Zhou and J. Chen: Appl. Phys. Lett., 2002, 82, 3829. |