J Mater Sci Technol ›› 2010, Vol. 26 ›› Issue (1): 15-19.

• Nanomaterialsand Nanotechnology • Previous Articles     Next Articles

Synthesis of GaPO4-GaN Coaxial Nanowires

Lutang Fu, Zhigang Chen, Hongtao Cong   

  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
  • Received:2009-01-08 Revised:2009-05-14 Online:2010-01-31 Published:2010-01-22
  • Supported by:

    Ministry of Science and Technology of China (No. 2009CB220001)
    the Australian Research Coun-cil under its Centers of Excellence Program

Abstract:

GaPO4-GaN coaxial nanowires were synthesized by two-step chemical vapor deposition method using H2 and NH3 as reactant gas in turn at 950°C. The morphology and microstructures of the GaPO4-GaN coaxial nanowires were studied by scanning elctron microscopy (SEM), X-ray diffraction (XRD) and transmission lectron microscopy (TEM). The nanowires have an average diameter of ~15 nm and length of hundreds of anometers. The core is GaPO4 crystal and the outer shell is GaN crystal. The formation  mechanism was iscussed and the key factors controlling the growth are temperature and the concentration of reactant gases. hese coaxial nanowires may have potential application for piezoluminescence nano-devices, and the two-step ynthetic technique could be used to grow rationally other 1D GaN-based nanowire heterostructures.

Key words: GaN, GaPO4, Coaxial nanowires