J Mater Sci Technol ›› 2009, Vol. 25 ›› Issue (05): 691-694.

• Articles • Previous Articles     Next Articles

Effects of Homo-bu®er Layer on Properties of Sputter-deposited ZnO Films

Jian Huang, Linjun Wang, Run Xu, Weimin, Shi Yiben Xia   

  • Received:2008-06-02 Revised:2009-06-08 Online:2009-09-28 Published:2009-10-10
  • Supported by:

    the National Natural Science Foundation of China (No. 60877017)
    Program for Changjiang Scholars and Innovative Research Team in University (No. IRT0739)
    Shanghai Leading Academic Disciplines (S30107) 
    Innovation Program of Shanghai Municipal Education Commission (No. 08YZ04)

Abstract:

Two-step growth regimes were applied to realize a homoepitaxial growth of ZnO films on freestanding diamond substrates by radio-frequency (RF) reactive magnetron sputtering method. ZnO buffer layers were deposited on freestanding diamond substrates at a low sputtering power of 50 W, and then ZnO main layers were prepared
on this buffer layer at a high sputtering power of 150 W. For comparison, a sample was also deposited directly on freestanding diamond substrate at a power of 150 W. The effects of ZnO buffer layers on the structural, optical, electrical and morphological properties of the ZnO main layer were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, semiconductor characterization system and atomic force microscopy (AFM) respectively. The experimental results suggested that homo-buffer layer was helpful to improve the crystalline quality of ZnO/diamond heteroepitaxial films.

Key words: Freestanding diamond, ZnO film, Buffer layer, Magnetron sputtering

CLC Number: