Type Inversion and Certain Physical Properties of Spray Pyrolysed SnO2:Al Films for Novel Transparent Electronics Applications

doi:10.1016/j.jmst.2013.09.019

Abstract

Abstract:

Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The Al doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity (ρ) is the minimum (0.38 Ω cm) for 20 at.% of Al doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to Al doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the Al doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO₂:Al films suitable for transparent electronic devices.

Key words: Tin oxide films, P-type transparent conducting oxide (TCO), Spray pyrolysis, Transparent electronics, Electrical properties, Optical properties

K. Ravichandran, K. Thirumurugan. Type Inversion and Certain Physical Properties of Spray Pyrolysed SnO₂:Al Films for Novel Transparent Electronics Applications[J]. J. Mater. Sci. Technol., DOI: 10.1016/j.jmst.2013.09.019.

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Type Inversion and Certain Physical Properties of Spray Pyrolysed SnO₂:Al Films for Novel Transparent Electronics Applications

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