J. Mater. Sci. Technol.

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Magnetic and Transport Properties of Mn0.98Cr0.02Te Epitaxial Films Grown on Al2O3 Substrates

Z.H. Wang1), D.Y. Geng1), J. Li1), Y.B. Li2), Z.D. Zhang1)   

  1. 1) Shenyang National Laboratory for Materials Science, Institute of Metal Research, and International Centre for Materials Physics,Chinese Academy of Sciences, Shenyang 110016, China
    2) Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin 130033, China
  • Received:2012-09-05 Revised:2013-11-13 Online:2014-02-15 Published:2014-02-14
  • Contact: Z.H. Wang
  • Supported by:

    This work was supported by the National Natural Science Foundation of China (No. 50902128), Project of Shenyang Natural Science and Technology Support Program (No.F10205154), Project of Jilin Provincial Natural Science Foundation(No. 20101534).

Abstract:

The epitaxial Mn0.98Cr0.02Te films on single crystal Al2O3 (0001) substrates were prepared by pulsed laser deposition. The X-ray diffraction and scanning electron microscopy results showed that the good continuous epitaxial film was obtained with substrate temperature of 500 °C. When the substrate temperature reached 700 °C, the film was island growth and the manganese oxides phase appeared. The temperature dependence of both the magnetization and electrical resistance showed a sharp rise at around 60 K due to the magneto-elastic coupling. The temperature dependence of the electrical resistance of Mn0.98Cr0.02Te provided evidence for a transition from the metallic to semiconducting state at 305 K due to the spin disorder scattering with a large contribution from the influence of magnon drag.

Key words: Magnetic properties, Mn0.98Cr0.02Te films, X-ray diffraction, Epitaxial film