Regulating the recrystallized grain to induce strong cube texture in oriented silicon steel

doi:10.1016/j.jmst.2021.03.081

Abstract

Abstract:

Cube texture contains two easy magnetization directions 〈001〉 parallel to rolling and transverse direction, respectively, which is the most ideal magnetic texture suitable not only for transformers but also for rotating machines. In this study, a strong cube texture with ODF density of 50.73 mrd was successfully obtained by regulating the recrystallized grain orientation using cross-rolling and pulsed electric current, compared to conventional thermal annealing (the average cube texture intensity is ~10 mrd in lots of latest studies). Cross cold rolling process intentionally “created” metastable deformed cube orientation in oriented silicon steel and the specific recrystallization texture rotation path was identified under pulsed electric current in 5 min: {114}<261>→{114}<151>→{114}<041>→{001}<150>→{001}<010>. The cube-oriented grains were induced by pulsed electric current (800 °C) and rapid heating (51.9 °C/s, 750 °C), while the cube grains were observed in the annealed samples at the high temperature (1060 °C). Recrystallized grain size of pulsed samples is about twice that of the annealed sample. This phenomenon is considered that the concurrent effects of electron wind force and Joule heating affected the nucleation, growth and rotation of cube grains by reducing the nuclear barrier, producing higher grain boundary mobility and structural evolution towards a state with lower electrical resistance. This idea of current-controlled texture is worthy of popularization in more materials and the realization of an electromagnetic field to crystal orientation selection is an interesting topic.

Key words: Cube texture, Cross-rolling, Recrystallization, Pulsed electric current, EBSD

Mengcheng Zhou, Xinfang Zhang. Regulating the recrystallized grain to induce strong cube texture in oriented silicon steel[J]. J. Mater. Sci. Technol., 2022, 96: 126-139.

Figures/Tables 20

Fig. 1. Schematic illustration of (a?c) the cross cold rolling process: (a) selecting 0.3 mm finished oriented silicon steel as the raw material for cross-rolling, (b) rolling to a thickness of 0.2 mm (~33% reduction) in the first direction (CRD1), (c) rolling to a thickness of 0.1 mm (~50% reduction) in the second direction (CRD2), (d) the 0.1 mm cold-rolled strip; (e) the device for electric pulsed treatment; (f) the temperature rise and heating rate caused by the pulsed electric current; (g) the relationship between pulse duration and temperature rise.

Fig. 2. φ2=45° ODF sections showing textures (a) before cold rolling, (b) after cold rolling, (c) after annealing for 5 min under THT, and (d) after treating for 5 min under EPT. (e) Guide for several crystal orientations in φ2=45° ODF section.

Fig. 3. (a) Cold rolling strip photo, (b) EBSD band contrast map and (c) inverse pole figure map of the cold-rolled sample. Local deformed region of (d) inverse pole figure map and (e) band contrast map. (f) The point-to-point misorientation profiles along two lines (L1 and L2) in the deformed region.

Fig. 4. Orientations of microstructure after pulsed treatment at 750 °C: (a) EBSD inverse pole figure (IPF) map, (b) orientation image map (OIM, 10° tolerance) of grains, (c) EBSD IPF map in region A, (d) OIM map in region A, (e) φ2=45° ODF section of region A, (f) φ2=45° ODF section of region B.

Fig. 5. Orientations of microstructure after pulsed treatment at 800 °C: (a) EBSD IPF map, (b) OIM (10° tolerance) of grains, (c) inverse pole figure map, (d) the volume fraction diagram of recrystallized grains.

Fig. 6. φ2=45° ODF section of the pulsed sample (800 °C) with different processing time: (a) 1 min, (b) 2 min, (c) 3 min and (d) 4 min. (e) Typical texture rotation path under pulsed electric current displayed in φ2=45° ODF section.

Fig. 7. Orientations of microstructure after pulsed treatment at 900 °C: (a) EBSD IPF map, (b) OIM (10° tolerance) of grains, (c) φ2=45° ODF section, (d) the volume fraction diagram of recrystallized grains.

Fig. 8. Orientations of microstructure after pulsed treatment at 1000 °C: (a) EBSD IPF map, (b) OIM (10° tolerance) of grains, (c) φ2=45° ODF section, (d) the volume fraction diagram of recrystallized grains.

Fig. 9. Orientations of microstructure after annealed treatment at 750 °C: (a) EBSD IPF map, (b) OIM (10° tolerance) of grains, (c) the volume fraction diagram of recrystallized grains; Orientations of microstructure after annealed treatment at 800 °C: (d) EBSD IPF map, (e) OIM (10° tolerance) of grains, (f) the volume fraction diagram of recrystallized grains.

Fig. 10. Orientations of microstructure after annealed treatment at 900 °C: (a) EBSD IPF map, (b) OIM (10° tolerance) of grains, (c) the volume fraction diagram of recrystallized grains, (d) φ2=45° ODF section; Orientations of microstructure after annealed treatment at 1000 °C: (e) EBSD IPF map, (f) OIM (10° tolerance) of grains, (g) the volume fraction diagram of recrystallized grains, (h) φ2=45° ODF section.

Fig. 11. EBSD IPF map of annealed sample at (a) 1030 °C, (b) 1060 °C, (c) 1100 °C; OIM (10° tolerance) of grains at (d) 1030 °C, (e) 1060 °C, (f) 1100 °C annealed samples.

Fig. 12. φ2=45° ODF section of annealed sample at (a) 1030 °C, (b) 1060 °C, (c) 1100 °C; the volume fraction diagram of recrystallized grains at (d) 1030 °C, (e) 1060 °C, (f) 1100 °C annealed samples.

Fig. 13. Orientations of microstructure after rapid heating treatment at 51.9 °C/s (to 750 °C): (a) EBSD IPF map, (b) φ2=45° ODF section, (c) OIM (10° tolerance) of grains, (d) the volume fraction diagram of recrystallized grains.

Fig. 14. EBSD IPF map of rapid heating sample at (a) 60.3 °C/s (to 800 °C), (b) 80.5 °C/s (to 900 °C), (c) 124.8 °C/s (to 1000 °C); OIM (10° tolerance) of grains at (d) 60.3 °C/s (to 800 °C), (e) 80.5 °C/s (to 900 °C), (f) 124.8 °C/s (to 1000 °C) rapid heating samples.

Fig. 15. φ2=45° ODF section of annealed sample at (a) 60.3 °C/s (to 800 °C), (b) 80.5 °C/s (to 900 °C), (c) 124.8 °C/s (to 1000 °C); the volume fraction diagram of recrystallized grains at (d) 60.3 °C/s (to 800 °C), (e) 80.5 °C/s (to 900 °C), (f) 124.8 °C/s (to 1000 °C) rapid heating samples.

Fig. 16. Effect of annealing temperature on ODF intensities of the cube and Goss texture components shown in φ2=45° ODF section: (a, b) pulsed samples, (c, d) annealed samples, (e, f) rapid heating samples.

Table 1 The calculated angle between the recrystallization texture and cube orientation in the pulsed sample.

Temperature ( °C)	Recrystallization texture	Euler angle (°)			Angle (°)
Temperature ( °C)	Miller indices	φ₁	ϕ	φ₂	<T, cube>
750	(114) [1 -13 3]	42.28	19.47	45	19.66
800	(001) [1 -5 0]	78.69	0	0	11.31
900	(113) [1 -7 2]	39.66	25.24	45	25.79
1000	(114) [0 -4 1]	46.69	19.47	45	19.54
AVG					19.08
SD					5.15

Table 2 The calculated angle between the recrystallization texture and cube orientation in the annealed sample.

Temperature ( °C)	Recrystallization texture	Euler angle (°)			Angle (°)
Temperature ( °C)	Miller indices	φ₁	ϕ	φ₂	<T, cube>
750	(114) [2 -6 1]	27.94	19.47	45	25.83
800	(113) [0 -3 1]	47.87	25.24	45	25.40
900	(117) [4 -11 1]	25.46	11.42	45	31.82
1000	(115) [2 -7 0]	30	15.79	45	21.75
1030	(115) [4 -9 1]	21.79	15.79	45	28.01
1060	(001) [1 -4 0]	75.96	0	0	14.04
1100	(110) [0 0 1]	90	90	45	45
AVG					27.41
SD					8.84

Fig. 17. Recrystallized grain size of pulsed sample, annealed samples and rapid heating samples after annealing at various temperatures. The error bars represent the standard deviations in the grain size distributions.

Fig. 18. (a?c) Schematic illustrating the grain boundary migration model and (d) Gibbs free energy change of atoms jumping across grain boundaries. (e) A simple rotational mechanism of grains under pulsed electric current.

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