Detailing interfacial reaction layer products between cubic boron nitride and Cu-Sn-Ti active filler metal

doi:10.1016/j.jmst.2020.08.014

Abstract

Abstract:

In the present study, we offer an in-depth analysis over the microstructure, thickness and product composition of the interfacial reaction layer generated upon CBN/Cu-Sn-Ti active filler metal at 1223 K. Current findings demonstrate that adequate wettability and satisfactory bonding have been achieved via chemical reactions between Ti and N, B. More importantly, we report, for the first time, the formation of a three-layer juxtaposition of reaction products, namely, TiN, TiB₂ and TiB, along the diffusion path of Ti. Meanwhile, we determine the average layer thickness to be 1.24 μm. Through deep etching, we unambiguously present morphologies of the newly formed TiN and TiB₂, which are columnar and bulky, respectively, and constitute the formation of a high strength metallurgical interfacial bonding layer, and is crucial towards gaining enhanced grinding performance. Finally, we propose a possible reaction sequence and mechanism that govern the nucleation and growth of corresponding crystals.

Key words: Brazing, Cubic boron nitride, Cu-Sn-Ti, Interfacial products

Yonggang Fan, Junxiang Fan, Cong Wang. Detailing interfacial reaction layer products between cubic boron nitride and Cu-Sn-Ti active filler metal[J]. J. Mater. Sci. Technol., 2021, 68: 35-39.

Figures/Tables 4

Fig. 1. CBN/Cu-Sn-Ti composites brazed at 1223 K: (a) Microstructure of the brazing interface, (b) magnified image of the yellow square area in (a), and (c) line elemental distribution scanning images of the yellow straight line across the interface in (b).

Fig. 2. (a) TEM dark field (DF) images showing the interface between CBN and Cu-Sn-Ti brazing filler metal; (b)-(f) EDS mappings of Cu, Sn, Ti, N, and B elements in the interfacial region, respectively; (g), (h) and (i) selected area diffraction patterns (SADPs) of red, yellow and green dashed circle areas in (a), respectively.

Fig. 3. Reaction products revealed after deep etching: (a) Typical morphologies; (b) XRD patterns.

Fig. 4. Schematic diagram of interfacial reaction layer formation mechanism: (a) Stage Ⅰ: Initial stage with TiN nucleating, (b) Stage Ⅱ: TiB2 nucleating, (c) Stage Ⅲ: TiN, TiB2 reaction layer growing and TiB nucleating, and (d) Stage Ⅳ: Final state.

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