Amorphous-to-crystalline transition-induced two-step thin film growth of quasi-one-dimensional penta-telluride ZrTe5

doi:10.1016/j.jmst.2024.05.039

Abstract

Abstract: Quasi-one-dimensional (quasi-1D) van der Waals (vdWs) materials, such as ZrTe₅, exhibit unique electrical properties and quantum phenomena, making them attractive for advanced electronic applications. However, large-scale growth of ZrTe₅ thin films presents challenges. We address this by employing sputtering, a common semiconductor industry technique. The as-deposited ZrTe₅ film is amorphous, and post-annealing induces a crystallization process akin to transition-metal dichalcogenides. Our study investigates the electrical and optical properties during this amorphous-to-crystalline transition, revealing insights into the underlying mechanism. This work contributes to the fundamental understanding of quasi-1D materials and introduces a scalable fabrication method for ZrTe₅ which offers the possibility of fabricating unique future electronic and optical devices.

Key words: Quasi-one-dimensional, ZrTe₅, Large-scale, Thin film, Phase-change

Yi Shuang, Yuta Saito, Shogo Hatayama, Paul Fons, Ando Daisuke, Yuji Sutou. Amorphous-to-crystalline transition-induced two-step thin film growth of quasi-one-dimensional penta-telluride ZrTe₅[J]. J. Mater. Sci. Technol., 2025, 210: 246-253.

References

[1] R. Xu, S. Zhang, F. Wang, J. Yang, Z. Wang, J. Pei, Y.W. Myint, B. Xing, Z. Yu, L. Fu, Q. Qin, Y. Lu, ACS Nano 10 (2016) 2046-2053.
[2] W. Zhang, H. Enriquez, Y. Tong, A.J. Mayne, A. Bendounan, A. Smogunov, Y.J. Dappe, A. Kara, G. Dujardin, H. Oughaddou, Nat. Commun. 12 (2021) 5160.
[3] A.I.U.Saleheen, R. Chapai, L.Xing, R. Nepal, D. Gong, X. Gui, W. Xie, D.P. Young, E.W. Plummer, R. Jin, NPJ Quantum Mater. 5 (2020) 53.
[4] J. Ma, S. Nie, X. Gui, M. Naamneh, J. Jandke, C. Xi, J. Zhang, T. Shang, Y. Xiong, I. Kapon, N. Kumar, Y. Soh, D. Gosálbez-Martínez, O.V. Yazyev, W. Fan, H. Hübener, U. De Giovannini, N.C. Plumb, M. Radovic, M.A. Sentef, W. Xie, Z. Wang, C. Mudry, M. Müller, M. Shi, Nat. Mater. 21 (2022) 423-429.
[5] L. Luo, D. Cheng, B. Song, L.L. Wang, C. Vaswani, P.M. Lozano, G. Gu, C. Huang, R.H.J.Kim, Z. Liu, J.M. Park, Y. Yao, K. Ho, I.E. Perakis, Q. Li, J. Wang, Nat. Mater. 20 (2021) 329-334.
[6] M. Chen, L. Li, M. Xu, W. Li, L. Zheng, X. Wang, Research 6 (2023) 0066.
[7] A.A. Balandin, F. Kargar, T.T. Salguero, R.K. Lake, Mater. Today 55 (2022) 74-91.
[8] L. Du, Y. Zhao, L. Wu, X. Hu, L. Yao, Y. Wang, X. Bai, Y. Dai, J. Qiao, M.G. Uddin, X. Li, J. Lahtinen, X. Bai, G. Zhang, W. Ji, Z. Sun, Nat. Commun. (2021) 4822.
[9] A.A. Balandin, R.K. Lake, T.T. Salguero, Appl. Phys. Lett. 121 (2022) 040401.
[10] Y. Zhou, J. Wu, W. Ning, N. Li, Y. Du, X. Chen, R. Zhang, Z. Chi, X. Wang, X. Zhu, P. Lu, C. Ji, X. Wan, Z. Yang, J. Sun, W. Yang, M. Tian, Y. Zhang, H.K. Mao, Proc. Natl. Acad. Sci. U. S. A. 113 (2016) 2904-2909.
[11] Z. Guo, H. Gu, M. Fang, B. Song, W. Wang, X. Chen, C. Zhang, H. Jiang, L. Wang, S. Liu, ACS Mater. Lett. 3 (2021) 525-534.
[12] P. Yang, W. Wang, X. Zhang, K. Wang, L. He, W. Liu, Y. Xu, Sci. Rep. 9 (2019) 3358.
[13] J.L. Zhang, C.M. Wang, C.Y. Guo, X.D. Zhu, Y. Zhang, J.Y. Yang, Y.Q. Wang, Z. Qu, L. Pi, H.-Z. Lu, M.L. Tian, Phys. Rev. Lett. 123 (1966) 196602.
[14] J. Zhu, C. Lee, F. Mahmood, T. Suzuki, S. Fang, N. Gedik, J.G. Checkelsky, Phys. Rev. B 106 (2022) 115105.
[15] A. Ramiere, F. Li, Y. Chen, Y. Fu, J. Alloy. Compd. 840 (2020) 155651.
[16] F. Léonard, W. Yu, K.C. Collins, D.L. Medlin, J.D. Sugar, A.A. Talin, W. Pan, ACS Appl. Mater. Interfaces 9 (2017) 37041-37047.
[17] Y. Liu, H. Pi, K. Watanabe, T. Taniguchi, G. Gu, Q. Li, H. Weng, Q. Wu, Y. Li, Y. Xu, Nano Lett 23 (2023) 5334-5341.
[18] T.M. Nenoff, D.X. Rademacher, M.A. Rodriguez, W. Yu, W. Pan, Cryst. Growth Des. 20 (2020) 699-705.
[19] S. Hatayama, Y. Saito, K. Makino, N. Uchida, Y. Shuang, S. Mori, Y. Sutou, M. Krbal, P. Fons, J. Mater. Chem.C-Mater. 10 (2022) 10627-10635.
[20] M. Krbal, V. Prokop, A.A. Kononov, J.R. Pereira, J. Mistrik, A.V. Kolobov, P.J. Fons, Y. Saito, S. Hatayama, Y. Shuang, Y. Sutou, S.A. Rozhkov, J.R. Stellhorn, S. Hayakawa, I. Pis, F. Bondino, A.C.S. Appl, Nano Mater. 4 (2021) 8834-8844.
[21] M. Krbal, J. Prikryl, I. Pis, V. Prokop, J.Rodriguez Pereira, A.V. Kolobov, Ceram. Int. 49 (2023) 2619-2625.
[22] K. Kang, S. Xie, L. Huang, Y. Han, P.Y. Huang, K.F. Mak, C.J. Kim, D. Muller, J. Park, Nature 520 (2015) 656-660.
[23] M. Wuttig, Nat. Mater. 4 (2005) 265-266.
[24] M. Wuttig, N. Yamada, Nat. Mater. 6 (2007) 824-832.
[25] D.A. Shirley, Phys. Rev. B 5 (1972) 4709-4714.
[26] Q. Wang, R. Luo, Y. Wang, W. Fang, L. Jiang, Y. Liu, R. Wang, L. Dai, J. Zhao, J. Bi, Z. Liu, L. Zhao, Z. Jiang, Z. Song, J. Schwarzkopf, T. Schroeder, S. Wu, Z.G. Ye, W. Ren, S. Song, G. Niu, Adv. Funct. Mater. 33 (2023) 2213296.
[27] Y.-Y. Lv, B.-B. Zhang, X. Li, K.-W. Zhang, X.-B. Li, S.-H. Yao, Y.B. Chen, J. Zhou, S.-T. Zhang, M.-H. Lu, S.-C. Li, Y.-F. Chen, Phys. Rev. B 97 (2018) 115137.
[28] B. Salzmann, A. Pulkkinen, B. Hildebrand, T. Jaouen, S.N. Zhang, E. Martino, Q. Li, G. Gu, H. Berger, O.V. Yazyev, A. Akrap, C. Monney, Phys. Rev. Mater. 4 (2020) 114201.
[29] L. Xu, W. Wang, Q. Xie, C. Hu, L. Chen, J. Zheng, H. Yin, G. Cheng, X. Ai, J. Raman Spectrosc. 53 (2022) 104-112.
[30] T. Liang, J. Lin, Q. Gibson, S. Kushwaha, M. Liu, W. Wang, H. Xiong, J.A.Sob-ota, M.Hashimoto, P.S. Kirchmann, Z.X. Shen, R.J. Cava, N.P. Ong, Nat. Phys. 14 (2018) 451-455.
[31] Y. Liu, X. Yuan, C. Zhang, Z. Jin, A. Narayan, C. Luo, Z. Chen, L. Yang, J. Zou, X. Wu, S. Sanvito, Z. Xia, L. Li, Z. Wang, F. Xiu, Nat. Commun. 7 (2016) 12516.
[32] S.A. Miller, I. Witting, U. Aydemir, L. Peng, A.J.E.Rettie, P. Gorai, D.Y. Chung, M.G. Kanatzidis, M. Grayson, V. Stevanovi ´ c, E.S. Toberer, G.J. Snyder, Phys. Rev. Appl. 9 (2018) 014025.
[33] Y. Zhang, C. Wang, L. Yu, G. Liu, A. Liang, J. Huang, S. Nie, X. Sun, Y. Zhang, B. Shen, J. Liu, H. Weng, L. Zhao, G. Chen, X. Jia, C. Hu, Y. Ding, W. Zhao, Q. Gao, C. Li, S. He, Z. Zhao, F. Zhang, S. Zhang, F. Yang, Z. Wang, Q. Peng, X. Dai, Z. Fang, Z. Xu, C. Chen, X.J. Zhou, Nat. Commun. 8 (2017) 15512.
[34] J. Luo, W. Liu, Z. Wang, Y. Lei, X. Zhou, M. Zhang, C. Zhang, S. Xie, Y. Liu, Z. Wang, X. Su, G. Tan, Y. Yan, X. Tang, Inorg. Chem. 60 (2021) 8890-8897.
[35] A.V. Kolobov, P. Fons, A.I. Frenkel, A.L. Ankudinov, J. Tominaga, T. Uruga, Nat. Mater. 3 (2004) 703-708.
[36] K.S. Andrikopoulos, S.N. Yannopoulos, G.A. Voyiatzis, A.V. Kolobov, M. Ribes, J. Tominaga, J. Phys.-Condens.Mat. 18 (2006) 965-979.
[37] M. Bokova, A. Tverjanovich, C.J. Benmore, D. Fontanari, A. Sokolov, M. Khomenko, M. Kassem, I. Ozheredov, E. Bychkov, ACS Appl. Mater. Inter-faces 13 (2021) 37363-37379.
[38] S. Hatayama, Y. Shuang, P. Fons, Y. Saito, A. Kolobov, K. Kobayashi, S. Shindo, D. Ando, Y. Sutou, ACS Appl. Mater. Interfaces 11 (2019) 43320-43329.
[39] Y. Shuang, Q. Chen, M. Kim, Y. Wang, Y. Saito, S. Hatayama, P. Fons, D. Ando, M. Kubo, Y. Sutou, Adv. Mater. 35 (2023) 2303646.
[40] J. Gao, M. Zhong, Q.J. Liu, B. Tang, F.S. Liu, X.J. Ma, Phys. B-Condens. Mat. 620 (2021) 413286.
[41] J.I. Pankove, D.A. Kiewit, J. Electrochem. Soc. 119 (1972) 156C.
[42] J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi B 15 (1966) 627-637.
[43] A. Pirovano, A.L. Lacaita, A. Benvenuti, F. Pellizzer, R. Bez, IEEE Trans. Electron. Devices 51 (2004) 452-459.
[44] B.N.F Mott, E.A. Davis, Electronic Processes in Non-Crystalline Materials, Oxford University Press, 2012.
[45] R. Wu, J.-Z. Ma, S.-M. Nie, L.-X. Zhao, X. Huang, J.-X. Yin, B.-B. Fu, P. Richard, G.-F. Chen, Z. Fang, X. Dai, H.-M. Weng, T. Qian, H. Ding, S.H. Pan, Phys. Rev. X 6 (2016) 021017.
[46] P. Zhang, R. Noguchi, K. Kuroda, C. Lin, K. Kawaguchi, K. Yaji, A. Harasawa, M. Lippmaa, S. Nie, H. Weng, V. Kandyba, A. Giampietri, A. Barinov, Q. Li, G.D. Gu, S. Shin, T. Kondo, Nat. Commun. 12 (2021) 406.
[47] H. Weng, X. Dai, Z. Fang, Phys. Rev. X 4 (2014) 011002.
[48] Y. Saito, S. Hatayama, Y. Shuang, P. Fons, A.V. Kolobov, Y. Sutou, Sci. Rep. 11 (2021) 4782.

Amorphous-to-crystalline transition-induced two-step thin film growth of quasi-one-dimensional penta-telluride ZrTe₅

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments

[1]	S.W. Park, H.J. Lee, K.A. Nirmal, T.H. Kim, D.H. Kim, J.Y. Choi, J.S. Oh, J.M. Joo, T.G. Kim. Phase-change heterostructure with HfTe₂ confinement sublayers for enhanced thermal efficiency and low-power operation through Joule heating localization [J]. J. Mater. Sci. Technol., 2025, 204(0): 104-114.
[2]	Si-Tong Ding, Yu-Chang Chen, Cai-Yu Shi, Lei Shen, Qiu-Jun Yu, Lang-Xi Ou, Ze-Yu Gu, Na Chen, Ting-Yun Wang, David Wei Zhang, Hong-Liang Lu. Thermal engineering in ALD-grown ZGO thin films for high-performance photodetectors [J]. J. Mater. Sci. Technol., 2025, 209(0): 19-26.
[3]	Tejing Jiao, Caiyin You, Na Tian, Zongfan Duan, Fuxue Yan, Pengrong Ren, Heguang Liu. Enhanced electromagnetic tunability of barium strontium titanate films via coating Pr modified yttrium iron garnet layer [J]. J. Mater. Sci. Technol., 2024, 202(0): 174-182.
[4]	Chenyang Wang, Zhifu Zhang, Haofei Wu, Xiaodong Wang, Kolan Madhav Reddy, Pan Liu, Shuangxi Song. High-temperature Mo-based metallic glass thin films with tunable microstructure and mechanical behaviors [J]. J. Mater. Sci. Technol., 2024, 198(0): 20-35.
[5]	Yushu Tang, Pengwei Tan, Yuanyuan Luo, Zheng Zhang, Liyang Luo, Guotao Duan. Hf-doped ZnO transistor with high bias stability and high field-effect mobility by modulation of oxygen vacancies and interfaces [J]. J. Mater. Sci. Technol., 2023, 163(0): 59-68.
[6]	Jinlin Chang, Chen Meng, Bowen Shi, Wenyuan Wei, Renzhi Li, Jinmin Meng, Haobin Wen, Xiangyu Wang, Jun Song, Zhirun Hu, Zekun Liu, Jiashen Li. Flexible, breathable, and reinforced ultra-thin Cu/PLLA porous-fibrous membranes for thermal management and electromagnetic interference shielding [J]. J. Mater. Sci. Technol., 2023, 161(0): 150-160.
[7]	Yu Bu, Xu Wang, Xiuming Bu, Zhengyi Mao, Zhou Chen, Zebiao Li, Fengqian Hao, Johnny C. Ho, Jian Lu. Self-assembling nacre-like high-strength and extremely tough polymer composites with new toughening mechanism [J]. J. Mater. Sci. Technol., 2023, 136(0): 236-244.
[8]	Leini Wang, Gang He, Wenhao Wang, Xiaofen Xu, Shanshan Jiang, Elvira Fortunato, Rodrigo Martins. Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits [J]. J. Mater. Sci. Technol., 2023, 159(0): 41-51.
[9]	Kai Lv, Chengwu Shi, Yang Yang, Qi Wang, Xun Sun, Wangchao Chen. The pyrolysis preparation of the compact and full-coverage AgSbS₂ thin films and the photovoltaic performance of the corresponding solar cells [J]. J. Mater. Sci. Technol., 2022, 98(0): 268-271.
[10]	Ning Wang, Jing Wang, Mengnan Liu, Chengyue Ge, Baorong Hou, Yanli Ning, Yiteng Hu. Preparation of Ag@CuFe₂O₄@TiO₂ nanocomposite films and its performance of photoelectrochemical cathodic protection [J]. J. Mater. Sci. Technol., 2022, 100(0): 12-19.
[11]	Cecil Cherian Lukose, Guillaume Zoppi, Martin Birkett. Mn₃Ag_(1-_x₎Cu₍_x₎N antiperovskite thin films with ultra-low temperature coefficient of resistance [J]. J. Mater. Sci. Technol., 2022, 99(0): 138-147.
[12]	In-Su Kim, Jong-Un Woo, Hyun-Gyu Hwang, Bumjoo Kim, Sahn Nahm. Artificial synaptic and self-rectifying properties of crystalline (Na_1-_xK_x)NbO₃ thin films grown on Sr₂Nb₃O₁₀ nanosheet seed layers [J]. J. Mater. Sci. Technol., 2022, 123(0): 136-143.
[13]	Bo Yang, Ivan Soldatov, Fenghua Chen, Yudong Zhang, Zongbin Li, Haile Yan, Rudolf Schäfer, Dunhui Wang, Claude Esling, Xiang Zhao, Liang Zuo. Observation of magnetic domain evolution in constrained epitaxial Ni-Mn-Ga thin films on MgO(0 0 1) substrate [J]. J. Mater. Sci. Technol., 2022, 102(0): 56-65.
[14]	Hong-Lei Chen, Xue-Mei Luo, Dong Wang, Peter Schaaf, Guang-Ping Zhang. Achieving very high cycle fatigue performance of Au thin films for flexible electronic applications [J]. J. Mater. Sci. Technol., 2021, 89(0): 107-113.
[15]	Dongfeng Ma, Shengcheng Mao, Jiao Teng, Xinliang Wang, Xiaochen Li, Jin Ning, Zhipeng Li, Qing Zhang, Zhiyong Tian, Menglong Wang, Ze Zhang, Xiaodong Han. In-situ revealing the degradation mechanisms of Pt film over 1000°C [J]. J. Mater. Sci. Technol., 2021, 95(0): 10-19.