High-mobility induced high-performance self-powered ultraviolet photodetector based on single ZnO microwire/PEDOT:PSS heterojunction via slight ga-doping

doi:10.1016/j.jmst.2021.03.047

Abstract

Abstract:

Semiconductor micro/nanostructures with broad bandgap can provide powerful candidates for fabricating ultraviolet photodetectors (PDs) due to their proper bandgap, unique optoelectronic properties, large surface-to-volume ratio and good integration. However, semiconducting micro/nanostructures suffer from low electron conductivity and abundant surface defects, which greatly limits their practical application in developing PDs. In this work, an ultraviolet PD consisting of single Ga-doped ZnO microwire (ZnO:Ga MW) and p-type poly(3,4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was designed. When exposed to ultraviolet illumination, the PD exhibits excellent performance (responsivity ∼ 185 mA/W, detectivity ∼ 2.4 ×1011 Jones, and fast response speed of ∼ 212 μs for rise time and ∼ 387 μs for decay time) under self-driven conditions. Compared with that of an undoped ZnO MW-based PD, the responsivity and detectivity of ZnO:Ga MW/PEDOT:PSS PD are significantly enhanced over 400% and 600%, respectively. Due to the incorporation of Ga element, the charge transport properties of a ZnO:Ga MW, specifically for the mobility, are effectively enhanced, which can substantially facilitate the generation, separation, transport and harvest efficiency of photo-generated carriers in the as-fabricated PD. Besides, the Ga-incorporation improves the crystalline quality of MWs and reduces surface state density, further suggesting a high-quality ZnO:Ga MW/PEDOT:PSS heterojunction. This work provides a potential approach for designing high-performance self-powered ultraviolet PDs from the aspect of enhancing carrier transport through fine doping.

Key words: UV Photodetectors, Self-powered, Mobility, High performance, Microwire

Peng Wan, Mingming Jiang, Tong Xu, Yang Liu, Caixia Kan. High-mobility induced high-performance self-powered ultraviolet photodetector based on single ZnO microwire/PEDOT:PSS heterojunction via slight ga-doping[J]. J. Mater. Sci. Technol., 2021, 93: 33-40.

Figures/Tables 7

Fig. 1. Morphology and structure of the as-synthesized samples. (a) SEM image of a ZnO MW, illustrating hexagonal cross section. (b) SEM image of a ZnO:Ga MW, illustrating hexagonal cross section. (c) Elemental mapping images of Zn, O, and Ga species acquired from a ZnO:Ga MW. (d) XRD patterns of the as-synthesized samples, containing ZnO and ZnO:Ga MWs. (e) Absorbance spectra of individual ZnO and ZnO:Ga MW. (f) PL spectra of individual ZnO and ZnO:Ga MW. The inset shows the enlarged view of PL spectra in the UV band.

Fig. 2. Photoelectric characterization of the as-prepared UV PDs composed of single ZnO and ZnO:Ga MWs, together with p-PEDOT:PSS polymer serving as hole transporting layer. (a) Schematic architecture of UV PD, involving a single MW and p-PEDOT:PSS polymer. (b) Microscopic image of a representative ZnO:Ga MW/PEDOT:PSS PD, the scale bar: 50 m. (c) Optical image of ZnO:Ga MW/PEDOT:PSS PD. (d) SEM image of a ZnO:Ga MW decorated by PEDOT:PSS polymer. (e) Raman spectrum of PEDOT:PSS polymer. (f) Transmittance spectrum of PEDOT:PSS film. (g) I-V curves of the Ag-PEDOT:PSS-Ag under the dark and light illumination via various incident wavelengths. (h) Logarithmic I-V curves of the ZnO MW/PEDOT:PSS heterostructure device, and ZnO:Ga MW/PEDOT:PSS heterostructured device in darkness and under the UV illumination condition. (i) Iph/Id ratio of the ZnO MW/PEDOT:PSS and ZnO:Ga MW/PEDOT:PSS heterojunction devices, respectively.

Fig. 3. Comparison of photoelectric performances of the as-fabricated single MW-based ZnO MW/PEDOT:PSS PD and ZnO:Ga MW/PEDOT:PSS PD. (a) Logarithmic I-V characteristic curve of the ZnO:Ga MW/PEDOT:PSS PD under various light intensities. (b) Logarithmic I-V characteristic curve of the ZnO MW/PEDOT:PSS PD under various light intensities. (c) Light intensity-dependent photocurrents of the PDs measured at zero bias. (d) The responsivity (R) of ZnO:Ga MW/PEDOT:PSS and ZnO MW/PEDOT:PSS PDs performed under various light intensities, respectively. (e) The detectivity (D*) of ZnO:Ga MW/PEDOT:PSS and ZnO MW/PEDOT:PSS PDs measured under various light intensities, respectively. (f) The enhancement of responsivity (R) and detectivity (D*) of the as-fabricated PDs, respectively.

Fig. 4. (a) The spectral responsivity of ZnO:Ga MW/PEDOT:PSS and ZnO MW/PEDOT:PSS PDs. (b) The spectral detectivity of ZnO:Ga MW/PEDOT:PSS and ZnO MW/PEDOT:PSS PDs. (c) The enhancement of responsivity and detectivity at different wavelength. (d) Ids-Vds curves of the ZnO MW-based FET at different Vg. The inset in top left corner is corresponding Ids-Vg curve at Vds = 1 V. The inset in bottom right corner shows the enlarged view of Ids-Vds curves. (e) Ids-Vds curves of the ZnO:Ga MW-based FET at different Vg. The inset in top left corner is corresponding Ids-Vg curve at Vds = 1 V. The inset in bottom right corner shows the enlarged view of Ids-Vds curves. (f) Energy band diagram of the ZnO MW/PEDOT:PSS heterojunction at zero bias.

Table 1. The electrical transport properties of ZnO MW and ZnO:Ga MW.

	ZnO MW	ZnO:Ga MW
Diameter(m)	10	10
Channel length(m)	200	200
Conductivity(S/cm)	0.2	1.9
Mobility(cm2V-1s-1)	2.22	11.92
Carrier concentration(cm-3)	5.63 × 1017	9.96 × 1017

Fig. 5. (a) Photoswitching characteristics via I-t curve of the self-powered ZnO:Ga MW/PEDOT:PSS PD under different light intensity. (b) Photoswitching characteristics via I-t curve of the self-powered ZnO MW/PEDOT:PSS PD under different light intensity. (c) Time response of the ZnO:Ga MW/PEDOT:PSS PD measured at 0 V bias. (d) Time response of the ZnO MW/PEDOT:PSS PD measured at 0 V bias.

Table 2. A comparison between the single MW-based ZnO:Ga (ZnO)/PEDOT:PSS PDs in this work and other previously reported works.

photodetector	wavelength(nm)	responsivity [mA/W]	detectivity[Jones]	rise time	decay time	Ref.
Cl-ZnO/PEDOT:PSS	365	2.33 (0 V)	1.54 × 1010	28 ms	23 ms	[18]
ZnO nanowires/Ag	325	1.25 (0 V)	2.7× 109	4.5 ms	3.5 ms	[46]
p-GaN/n-ZnMgO	362	196 (0 V)	-	1.7 ms	3.3 ms	[49]
ZnO/CuO/GaN	365	1.44 (0 V)	5.9× 1010	120 ms	220 ms	[50]
ZnO/CdS/GaN	300	176 (0 V)	2.5× 1012	<0.35 s	<0.35 s	[51]
n-ZnO/CsPbBr3/p-GaN	365	44.53 (0 V)	2.03 × 1012	160 ms	150 ms	[52]
ZnO nanowires/PEDOT: PSS	325	3.5 (0 V)	7.5× 109	5.8 ms	7.3 ms	[53]
ZnO MW/PEDOT:PSS	370	35 (0 V)	3.3× 1010	222 μs	3.84 ms	This work
ZnO:Ga MW/PEDOT:PSS	370	185 (0 V)	2.4× 1011	212 μs	387 μs	This work

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