Abstract: In the past several decades, dilute magnetic semiconductors, particularly the dilute magnetic oxides have evolved into an important branch of materials science due to their potential application in spintronic devices combining of properties of semiconductors and ferromagnets. In spite of a major effort devoted to the mechanism of ferromagnetism with a high Curie temperature in these materials, it still remains the most controversial research topic, especially given the unexpected d⁰ ferromagnetism in a series of undoped wide-band-gap oxides films or nanostructures. Recently, an abundance of research has shown the critical role of various defects in the origin and control of spontaneous magnetic ordering, but contradicting views from intertwined theoretical calculations and experiments require more in-depth systematic research. In our previous work, considerable efforts have been focused on two major oxides, i.e. ZnO and ZrO₂. This review will present a summary of current experimental status of this defect-driven ferromagnetism in dilute magnetic oxides (DMOs).

Key words: Dilute magnetic oxides, Defects, ZnO, ZrO2