Dielectric and Electrical Transport Properties of the Fe3+-doped CaCu3Ti4O12

J. Mater. Sci. Technol. ›› 2012, Vol. 28 ›› Issue (12): 1145-1150.

• Mechanical and Functional Properties of Materials • Previous Articles Next Articles

Dielectric and Electrical Transport Properties of the Fe³⁺-doped CaCu₃Ti₄O₁₂

Zhi Yang, Yue Zhang, Guang You, Kun Zhang, Rui Xiong, Jing Shi

1) Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
2) Institution of Sensors and Intelligent System and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
3) Key Laboratory for the Green Preparation and Application of Functional Materials of Ministry of Education, Hubei University, Wuhan 430062, China
4) International Center for Materials Physics, Shenyang 110016, China

Received:2012-08-04 Revised:2012-09-23 Online:2012-11-12 Published:2012-11-23
Contact: Jing Shi
Supported by:
the National Natural Science Foundation of China (Nos. 51172166 and 51202078) and the Huazhong University of Science and Technology, China (No. 01-18-185011)

Abstract

Abstract:

CaCu_3-xFe_xTi₄O₁₂ (x=0, 0.015, 0.03, 0.045, 0.06) ceramics were synthesized by sol-gel method. The electrical conduction and dielectric measurements show that the doping of a very small amount of Fe³⁺ ions greatly reduces the low-frequency dielectric constants and leakage, and enhances grain resistivity. For the doped samples, the appearance of the strong low-frequency peaks in the spectra of dielectric loss confirms that the doping of Fe³⁺ ions induces the contact-electrode effect on ceramic surface. These great changes of electrical properties may originate from the reduced amount of oxygen vacancies by doping Fe³⁺.

Key words: Ceramics, dc electric current, Dielectric properties, Doping

Zhi Yang, Yue Zhang, Guang You, Kun Zhang, Rui Xiong, Jing Shi. Dielectric and Electrical Transport Properties of the Fe³⁺-doped CaCu₃Ti₄O₁₂[J]. J. Mater. Sci. Technol., 2012, 28(12): 1145-1150.

References

[1 ] A.P. Ramirez, M.A. Subramanian, M. Gardel, G. Blumberg, D. Blumberg, D. Li, T. Vogt and S.M. Shapiro: Solid State Commun., 2000, 115(9), 217.

[2 ] M.A. Subramanian, D. Li, N. Duan, B.A. Reisner and A.W. Sleight: J. Solid State Chem., 2000, 151(2), 323.

[3 ] T.B. Adams, D.C. Sinclair and A.R. West: Adv. Mater., 2002, 14(18), 1321.

[4 ] T. Fang and H. Shiau: J. Am. Ceram. Soc., 2004, 87(11), 2072.

[5 ] D.C. Sinclair, T.B. Adams, F.D. Morrison and A.R. West: Appl. Phys. Lett., 2002, 80(12), 2153.

[6 ] H.B. Xiao, C.P. Yang, C. Huang, L.F. Xu, D.W. Shi, V.V. Marchenkov, I.V. Medvedeva and K. BÄarner: J. Appl. Phys., 2012, 111(6), 063713.

[7 ] L. Zhang and Z.J. Tang: Phys. Rev. B, 2004, 70(17), 174306.

[8 ] S.M. Ke, H.T. Huang and H.Q. Fan: Appl. Phys. Lett., 2006, 89(18), 182904.

[9 ] C.C. Wang and L.W. Zhang: Appl. Phys. Lett., 2006, 88(4), 042906.

[10] M. Li, A. Feteira, D.C. Sinclair and A.R. West: Appl. Phys. Lett., 2006, 88(23), 232903.

[11] C.H. Kim, Y.H. Jang, S.J. Seo, C.H. Song, J.Y. Son, Y.S. Yang and J.H. Cho: Phys. Rev. B, 2012, 85(24), 245210.

[12] A.K. Rai, N.K. Singh, S.K. Lee, K.D. Mandal, D. Kumar and O. Parkash: J. Alloy. Compd., 2011, 509(36), 8901.

[13] J. Liu, R.W. Smith and W. Mei: Chem. Mater., 2007, 19(24), 6020.

[14] A. Koitzsch, G. Blumberg, A. Gozar, B. Dennis, A.P. Ramirez, S. Trebst and S. Wakimoto: Phys. Rev. B, 2002, 65(5), 052406.

[15] W. Li, S.Y. Qiu, N. Chen and G.P. Du: J. Mater. Sci. Technol., 2010, 26(8), 682.

[16] C. Ang, Z. Yu and L.E. Cross: Phys. Rev. B, 2000, 62(1), 228.

[17] S. Chung, I. Kim and S. Kang: Nat. Mater., 2004, 3, 774.

[18] M. Li, Z.J. Shen, M. Nygren, A. Feteira, D.C. Sinclair and A.R. West: J. Appl. Phys., 2009, 106(10), 104106.

[19] S.F. Shao, J.L. Zhang, P. Zheng, W.L. Zhong and C.L. Wang: J. Appl. Phys., 2006, 99(8), 084106.

[1]	Qianqian Liu, Quan Zhang, Lu Zhang, Wei-Lin Dai. Highly efficient single-crystalline NaNb_1-_XTa_XO₃ (X = 0.125) wires: The synergistic effect of tantalum-doping and morphology on photocatalytic hydrogen evolution [J]. J. Mater. Sci. Technol., 2020, 54(0): 20-30.
[2]	Wei Zhang, Yuchen Liu, Yanchun Zhou, Wai-Yim Ching, Qian Li, Wenxian Li, Jiong Yang, Bin Liu. Anti-perovskite carbides and nitrides A₃BX: A new family of damage tolerant ceramics [J]. J. Mater. Sci. Technol., 2020, 40(0): 64-71.
[3]	Minhwan Ko, Sang Yeon Lee, Jucheol Park, Hyungtak Seo. Significant control of metal-insulator transition temperature through catalytic excessive oxygen doping in high-performance vanadium dioxide nanobeam channel [J]. J. Mater. Sci. Technol., 2020, 44(0): 96-101.
[4]	Myung-Sic Chae, Tae Ho Lee, Kyung Rock Son, Tae Hoon Park, Kyo Seon Hwang, Tae Geun Kim. Electrochemically metal-doped reduced graphene oxide films: Properties and applications [J]. J. Mater. Sci. Technol., 2020, 40(0): 72-80.
[5]	Zifan Zhao, Heng Chen, Huimin Xiang, Fu-Zhi Dai, Xiaohui Wang, Wei Xu, Kuang Sun, Zhijian Peng, Yanchun Zhou. High-entropy (Y_0.2Nd_0.2Sm_0.2Eu_0.2Er_0.2)AlO₃: A promising thermal/environmental barrier material for oxide/oxide composites [J]. J. Mater. Sci. Technol., 2020, 47(0): 45-51.
[6]	Heng Chen, Biao Zhao, Zifan Zhao, Huimin Xiang, Fu-Zhi Dai, Jiachen Liu, Yanchun Zhou. Achieving strong microwave absorption capability and wide absorption bandwidth through a combination of high entropy rare earth silicide carbides/rare earth oxides [J]. J. Mater. Sci. Technol., 2020, 47(0): 216-222.
[7]	Juan Du, Aibing Chen, Yue Zhang, Shuang Zong, Haixia Wu, Lei Liu. PVP-assisted preparation of nitrogen doped mesoporous carbon materials for supercapacitors [J]. J. Mater. Sci. Technol., 2020, 58(0): 197-204.
[8]	Yueni Mei, Yuyu Li, Fuyun Li, Yaqian Li, Yingjun Jiang, Xiwei Lan, Songtao Guo, Xianluo Hu. Lithium-ion insertion kinetics of Na-doped Li₂TiSiO₅ as anode materials for lithium-ion batteries [J]. J. Mater. Sci. Technol., 2020, 57(0): 18-25.
[9]	Lei Liu, Feifei Lu, Jian Tian, Xingyue Zhangyang, Zhisheng Lv. High-efficient electron collection capability of graded Al compositional GaN nanowire arrays cathode [J]. J. Mater. Sci. Technol., 2020, 58(0): 86-94.
[10]	Chao Wang, Qiang Li, Weiming Zhang, Huiqing Fan. Large electric field-induced strain in the novel BNKTAN-BNBLTZ lead-free ceramics [J]. J. Mater. Sci. Technol., 2020, 45(0): 15-22.
[11]	Fu-Zhi Dai, Bo Wen, Yinjie Sun, Huimin Xiang, Yanchun Zhou. Theoretical prediction on thermal and mechanical properties of high entropy (Zr_0.2Hf_0.2Ti_0.2Nb_0.2Ta_0.2)C by deep learning potential [J]. J. Mater. Sci. Technol., 2020, 43(0): 168-174.
[12]	Kritesh Kumar Gupta, Tanmoy Mukhopadhyay, Aditya Roy, Sudip Dey. Probing the compound effect of spatially varying intrinsic defects and doping on mechanical properties of hybrid graphene monolayers [J]. J. Mater. Sci. Technol., 2020, 50(0): 44-58.
[13]	Yongchun Zhang, Gang He, Wenhao Wang, Bing Yang, Chong Zhang, Yufeng Xia. Aqueous-solution-driven HfGdO_x gate dielectrics for low-voltage-operated α-InGaZnO transistors and inverter circuits [J]. J. Mater. Sci. Technol., 2020, 50(0): 1-12.
[14]	Hao Liu, Xuan Ge, Qiaodan Hu, Fan Yang, Jianguo Li. A new sight into the glass forming ability caused by doping on Ba- and Ti-site in BaTi₂O₅ glass [J]. J. Mater. Sci. Technol., 2020, 54(0): 112-118.
[15]	Zizhan Liang, Rongchen Shen, Hau Ng Yun, Peng Zhang, Quanjun Xiang, Xin Li. A review on 2D MoS₂ cocatalysts in photocatalytic H₂ production [J]. J. Mater. Sci. Technol., 2020, 56(0): 89-121.

Dielectric and Electrical Transport Properties of the Fe³⁺-doped CaCu₃Ti₄O₁₂

RichHTML

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments